- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373637 > TH58100FT (Toshiba Corporation) TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS PDF資料下載
參數(shù)資料
| 型號(hào)： | TH58100FT |
| 廠商： | Toshiba Corporation |
| 英文描述： | TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| 中文描述： | 馬鞍山暫定東芝數(shù)字集成電路硅柵CMOS |
| 文件頁數(shù)： | 1/43頁 |
| 文件大?。?/td> | 421K |
| 代理商： | TH58100FT |
當(dāng)前第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁
TH58100FT
2001-03-05 1/43
Power supply
Program/Erase Cycles 1E5 cycle (with ECC)
Access time
Cell array to register 25 s max
Serial Read Cycle
Operating current
Read (50 ns cycle)
Program (avg.)
Erase (avg.)
Standby
Package
TSOPI48-P-1220-0.50 (Weight: 0.53 g typ.)
PIN NAMES
V
CC
2.7 V to 3.6 V
50 ns min
10 mA typ.
10 mA typ.
10 mA typ.
100 A
TENTATIVE
1-GBIT (128M 8 BITS) CMOS NAND E
2
PROM
DESCRIPTION
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
The TH58100 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable
Read-Only Memory (NAND E
2
PROM) organized as 528 bytes 32 pages 8192 blocks. The device has a 528-byte
static register which allows program and read data to be transferred between the register and the memory cell array
in 528-byte increments. The Erase operation is implemented in a single block unit (16 Kbytes 512 bytes: 528 bytes
32 pages).
The TH58100 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as
well as for command inputs. The Erase and Program operations are automatically executed making the device most
suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and
other systems which require high-density non-volatile memory data storage.
FEATURES
Organization
Memory cell allay 528 128K 8 2
Register
Page size
Block size
Modes
Read, Reset, Auto Page Program
Auto Block Erase, Status Read
Multi Block Program, Multi Block Erase
Mode control
Serial input/output
Command control
PIN ASSIGNMENT
(TOP VIEW)
528 8
528 bytes
(16K 512) bytes
I/O1 to I/O8
I/O port
CE
Chip enable
WE
Write enable
RE
Read enable
CLE
Command latch enable
ALE
Address latch enable
WP
Write protect
BY
/
RY
Ready/Busy
GND
Ground input
V
CC
Power supply
V
SS
Ground
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
NC
NC
NC
NC
I/O8
I/O7
I/O6
I/O5
NC
NC
NC
V
CC
V
NC
NC
NC
I/O4
I/O3
I/O2
I/O1
NC
NC
NC
NC
NC
NC
NC
NC
NC
GND
BY
/
RY
RE
CE
NC
NC
V
CC
V
NC
NC
CLE
ALE
WE
WP
NC
NC
NC
NC
NC
TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general
can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer,
when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid
situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to
property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most
recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide
for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc..
The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal
equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are
neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or
failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control
instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control
instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document
shall be made at the customer’s own risk.
The products described in this document are subject to the foreign exchange and foreign trade laws.
The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
The information contained herein is subject to change without notice.
000707EBA1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TH58NVG1S3AFT | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TH58NVG1S3AFT05 | TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS |
| TH7804A | 50 AMP LATCHING POWER RELAY |
| TH7804ACC | 50 AMP LATCHING POWER RELAY |
| TH7813A | 50 MHz 1024/2048 Linear CCDs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TH58512DC-T051(Y) | 制造商:Toshiba America Electronic Components 功能描述:IC E2PROM NAND 3V 512MBIT FDC22A |
| TH58BVG3S0FTAI0 | 制造商:Toshiba America Electronic Components 功能描述:8GB SLC NAND TSOP 32NM (EEPROM) - Trays |
| TH58BYG2S3HBAI4 | 制造商:Toshiba America Electronic Components 功能描述:4GB SLC BENAND 24NM BGA 9X11 1 |
| TH58BYG2S3HBAI6 | 制造商:Toshiba America Electronic Components 功能描述:4GB SLC BENAND 24NM BGA 6.5X8 1.8V (EEPROM) 2K PAGE - Trays |
| TH58DVG4S0ETA20 | 制造商:Toshiba America Electronic Components 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。