參數(shù)資料
型號: WED416S16030A10SI
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: DRAM
英文描述: 16M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54
封裝: TSOP2-54
文件頁數(shù): 24/26頁
文件大?。?/td> 398K
代理商: WED416S16030A10SI
7
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
White Electronic Designs
WED416S16030A
CURRENT STATE TRUTH TABLE
L
OP Code
Mode Register Set
Set the Mode Register
2
L
H
X
Auto orSelf Refresh
Start Auto orSelf Refresh
2,3
L
H
L
X
Precharge
No Operation
L
H
BA
Row Address
Bank Activate
Activate the specified bank and row
Idle
L
H
L
BA
Column
Write w/o Precharge
ILLEGAL
4
L
H
L
H
BA
Column
Read w/o Precharge
ILLEGAL
4
L
H
L
X
Burst Termination
No Operation
L
H
X
No Operation
H
X
Device Deselect
No Operation or Power Down
5
L
OP Code
Mode Register Set
ILLEGAL
L
H
X
Auto orSelf Refresh
ILLEGAL
L
H
L
X
Precharge
6
L
H
BA
Row Address
Bank Activate
ILLEGAL
4
Row Active
L
H
L
BA
Column
Write
Start Write; Determine if Auto Precharge
7,8
L
H
L
H
BA
Column
Read
Start Read; Determine if Auto Precharge
7,8
L
H
L
X
Burst Termination
No Operation
L
H
X
No Operation
H
X
Device Deselect
No Operation
L
OP Code
Mode Register Set
ILLEGAL
L
H
X
Auto orSelf Refresh
ILLEGAL
L
H
L
X
Precharge
Terminate Burst; Start the Precharge
L
H
BA
Row Address
Bank Activate
ILLEGAL
4
Read
L
H
L
BA
Column
Write
Terminate Burst; Start the Write cycle
8,9
L
H
L
H
BA
Column
Read
Terminate Burst; Start a new Read cycle
8,9
L
H
L
X
Burst Termination
Terminate the Burst
L
H
X
No Operation
Continue the Burst
H
X
Device Deselect
Continue the Burst
L
OP Code
Mode Register Set
ILLEGAL
L
H
X
Auto orSelf Refresh
ILLEGAL
L
H
L
X
Precharge
Terminate Burst; Start the Precharge
L
H
BA
Row Address
Bank Activate
ILLEGAL
4
Write
L
H
L
BA
Column
Write
Terminate Burst; Start a new Write cycle
8,9
L
H
L
H
BA
Column
Read
Terminate Burst; Start the Read cycle
8,9
L
H
L
X
Burst Termination
Terminate the Burst
L
H
X
No Operation
Continue the Burst
H
X
Device Deselect
Continue the Burst
L
OP Code
Mode Register Set
ILLEGAL
L
H
X
Auto orSelf Refresh
ILLEGAL
L
H
L
X
Precharge
ILLEGAL
4
Read with
L
H
BA
Row Address
Bank Activate
ILLEGAL
4
Auto Precharge
L
H
L
BA
Column
Write
ILLEGAL
L
H
L
H
BA
Column
Read
ILLEGAL
L
H
L
X
Burst Termination
ILLEGAL
L
H
X
No Operation
Continue the Burst
H
X
Device Deselect
Continue the Burst
Current State
Command
Action
Notes
CE
RAS
CAS
WE
BA0,1
A11-12
Description
A10/AP-A0
相關(guān)PDF資料
PDF描述
WV3HG128M72EEU534PD4IMG 128M X 72 DDR DRAM MODULE, 0.5 ns, ZMA200
WV3HG128M72EEU665PD4IMG 128M X 72 DDR DRAM MODULE, 0.45 ns, ZMA200
WMF128K8X-150DEC5 128K X 8 FLASH 5V PROM, 150 ns, CDSO32
WSF2816-39H1M SPECIALTY MEMORY CIRCUIT, CHIP66
WS128K32-20G4TC 128K X 32 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
WED416S16030C10SI 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4M x 16 Bits x 4 Banks Synchronous DRAM
WED416S16030C75SI 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4M x 16 Bits x 4 Banks Synchronous DRAM
WED416S16030C7SI 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4M x 16 Bits x 4 Banks Synchronous DRAM
WED416S16030C8SI 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4M x 16 Bits x 4 Banks Synchronous DRAM
WED416S8030A 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2Mx16x 4 Banks Synchronous DRAM