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參數資料
| 型號： | WED416S16030A10SI |
| 廠商： | WHITE ELECTRONIC DESIGNS CORP |
| 元件分類： | DRAM |
| 英文描述： | 16M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54 |
| 封裝： | TSOP2-54 |
| 文件頁數： | 6/26頁 |
| 文件大小： | 398K |
| 代理商： | WED416S16030A10SI |
14
White Electronic Designs Corporation Westborough MA (508) 366-5151
White Electronic Designs
WED416S16030A
RAS
CAS
ADDR
BA
DQM
A10/AP
CKE
CLOCK
CE
Cc0
Cd0
Ca0
Ra
CL = 2
DQ
Write
(A-Bank)
Write
(A-Bank)
Read
(A-Bank)
Precharge
(A-Bank)
Read
(A-Bank)
Row Active
(A-Bank)
WE
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
HIGH
tRCD
Ra
Qa0
tRDL
tCDL
Qa1
Qb0
Qb1
Qb2
Dc0
Dc1
Dd0
Dd1
CL = 3
Qa0
Qa1
Qb0
Qb1
Dc0
Dc1
Dd0
Dd1
DON'T CARE
Cb0
Note 2
Note 3
Note 1
FIG. 5 PAGE READ & WRITE CYCLE AT SAME BANK @ BURST
LENGTH=4
NOTES:
1. To write data before burst read ends, DQM should be asserted three cycles prior to write command to avoid bus contention.
2. Row precharge will interrupt writing. Last data input, tRDL before Row precharge, will be written.
3. DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input data after Row
prechage cycle will be masked internally.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| WED416S16030C10SI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4M x 16 Bits x 4 Banks Synchronous DRAM |
| WED416S16030C75SI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4M x 16 Bits x 4 Banks Synchronous DRAM |
| WED416S16030C7SI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4M x 16 Bits x 4 Banks Synchronous DRAM |
| WED416S16030C8SI | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:4M x 16 Bits x 4 Banks Synchronous DRAM |
| WED416S8030A | 制造商:WEDC 制造商全稱:White Electronic Designs Corporation 功能描述:2Mx16x 4 Banks Synchronous DRAM |
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