參數資料
型號: WED416S16030A10SI
廠商: WHITE ELECTRONIC DESIGNS CORP
元件分類: DRAM
英文描述: 16M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54
封裝: TSOP2-54
文件頁數: 8/26頁
文件大?。?/td> 398K
代理商: WED416S16030A10SI
16
White Electronic Designs Corporation Westborough MA (508) 366-5151
White Electronic Designs
WED416S16030A
FIG. 7 PAGE WRITE CYCLE AT DIFFERENT BANK @ BURST
LENGTH=4
NOTES:
1. To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data.
2. To interrupt burst write by Row precharge, both the write and the precharge banks must be the same.
RAS
CAS
ADDR
BA
DQM
A10/AP
CKE
CLOCK
CE
CAc
CBd
RBb
CAa
RAa
DQ
Write
(A-Bank)
Write
(B-Bank)
Row Active
(B-Bank)
Write
(B-Bank)
Precharge
(Both Banks)
Write
(A-Bank)
Row Active
(A-Bank)
WE
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
HIGH
RAa
DAa3 DBb0
DBb1 DBb2 DBb3 DAc0
DAc1 DBd0 DBd1
DAa1
DAa0
DAa2
DON'T CARE
CBb
Note 2
Note 1
RBb
tRDL
tCDL
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