參數(shù)資料
型號: XRT91L82
廠商: Exar Corporation
英文描述: 2.488/2.666 GBPS STS-48/STM-16 SONET/SDH TRANSCEIVER
中文描述: 2.488/2.666 Gbps的STS-48/STM-16的SONET / SDH收發(fā)器
文件頁數(shù): 55/59頁
文件大小: 414K
代理商: XRT91L82
xr
REV. P1.0.5
PRELIMINARY
2.488/2.666 GBPS STS-48/STM-16 SONET/SDH TRANSCEIVER
XRT91L82
52
LVTTL/LVCMOS SIGNAL DC ELECTRICAL CHARACTERISTICS
N
OTE
:
All input control pins are LVCMOS and LVTTL compatible. All output control pins are LVCMOS compatible only.
SEREF OUTPUT CHARACTERISTICS
V
IL
LVDS
Input Low Voltage
800
mV
V
IDIFF
LVDS
Input Differential Voltage
Swing
200
1300
mV
V
ISINGLE
LVDS
Input Single-Ended Voltage
Swing
100
650
mV
Test Condition: T
A
= 25°C, VDD
1.8
= 1.8V + 5%, VDD
_IO
= 3.3V + 5% unless otherwise specified
S
YMBOL
T
YPE
P
ARAMETER
M
IN
T
YP
M
AX
U
NITS
C
ONDITIONS
V
OH
LVCMOS
Output High Voltage
2.93
VDD
_IO
V
I
OH
= -1.0mA
V
OL
LVCMOS
Output Low Voltage
0
0.2
V
I
OH
= 1.0mA
V
IH
LVTTL/
LVCMOS
Input High Voltage
2.2
3.3
V
V
IL
LVTTL/
LVCMOS
Input Low Voltage
-0.5
0.7
V
I
IH
LVTTL/
LVCMOS
Input High Current
50
500
μ
A
2.2V<V
IN
<3.3V
V
IN
=2.4V typical
I
IL
LVTTL/
LVCMOS
Input Low Current
-500
μ
A
-0.5V<V
IN
<0.7V
I
LEAK
LVTTL/
LVCMOS
Input Leakage Current
-10
10
μ
A
V
IN
= VDD
_IO
or V
IN
= 0
I
LEAK_PU
LVTTL/
LVCMOS
Input Leakage Current with
Pull-Up Resistor
61.3
216
μ
A
V
IN
= 0
I
LEAK_PD
LVTTL/
LVCMOS
Input Leakage Current with
Pull-Down Resistor
61.3
216
μ
A
V
IN
= VDD
_IO
S
YMBOL
P
ARAMETER
M
IN
T
YP
M
AX
U
NITS
C
ONDITIONS
V
BB
100 K Reference Bias Voltage
VDD
_IO
- 1.45
VDD
_IO
- 1.17
V
N
OTE
:
The SEREF output is designed to have maximum 30pF load capacitance, 750
μ
A sourcing and 1 mA sinking
capability.
Test Condition: T
A
= 25°C, VDD
1.8
= 1.8V + 5%, VDD
_IO
= 3.3V + 5% unless otherwise specified
S
YMBOL
T
YPE
P
ARAMETER
M
IN
T
YP
M
AX
U
NITS
C
ONDITIONS
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