參數(shù)資料
型號: 28F008S5
廠商: Intel Corp.
英文描述: 8-MBIT 5 VOLT FlashFile Memory(8M位5V閃速存儲器)
中文描述: 8兆位5伏FlashFile內(nèi)存(800萬位5V的閃速存儲器)
文件頁數(shù): 27/38頁
文件大?。?/td> 427K
代理商: 28F008S5
E
6.4
28F004S5, 28F008S5, 28F016S5
27
PRELIMINARY
DC Characteristics
— Commercial Temperature
5.0 V V
CC
Test
Sym
Parameter
Notes
Typ
Max
Unit
Conditions
I
LI
Input Load Current
1
±
1
μ
A
V
CC
= V
CC
Max, V
IN
= V
CC
or GND
I
LO
Output Leakage Current
1
±
10
μ
A
V
CC
= V
CC
Max, V
OUT
= V
CC
or GND
I
CCS
V
CC
Standby Current
1,3,6
25
100
μ
A
CMOS Inputs
V
= V
Max
CE# = RP# = V
CC
± 0.2 V
0.4
2
mA
TTL Inputs
V
CC
= V
CC
Max, CE# = RP# = V
IH
I
CCD
V
Deep Power-Down
Current
1
10
μ
A
RP# = GND ± 0.2 V
I
OUT
(RY/BY#) = 0 mA
CMOS Inputs
V
CC
= V
CC
Max, CE# = GND
f = 8 MHz, I
OUT
= 0 mA
I
CCR
V
CC
Read Current
1,5,6
17
38
mA
20
50
mA
TTL Inputs
V
CC
= V
CC
Max, CE# = GND
f = 8 MHz, I
OUT
= 0 mA
I
CCW
V
CC
Program/Set
1,7
35
mA
V
PP
= 5.0 V ± 10%
Lock-Bit Current
30
mA
V
PP
= 12.0 V ± 5%
I
CCE
V
CC
Block Erase/Clear
1,7
30
mA
V
PP
= 5.0 V ± 10%
Block Lock-Bits Current
25
mA
V
PP
= 12.0 V ± 5%
I
CCWS
I
CCES
V
Program/Block
Erase Suspend Current
1,2
1
10
mA
CE# = V
IH
I
PPS
V
PP
Standby Current
1
± 2
± 15
μA
V
PP
V
CC
I
PPR
V
PP
Read Current
1
10
200
μA
V
PP
> V
CC
I
PPD
V
PP
Deep Power-Down
Current
1
0.1
5
μA
RP# = GND ± 0.2 V
I
PPW
V
PP
Program or
1,7
40
mA
V
PP
= 5.0 V ± 10%
Set Lock-Bit Current
15
mA
V
PP
= 12.0 V ± 5%
I
PPE
V
PP
Block Erase or Clear
1,7
20
mA
V
PP
= 5.0 V ± 10%
Block Lock-Bits Current
15
mA
V
PP
= 12.0 V ± 5%
I
PPWS
I
PPES
V
Program or Block
Erase Suspend Current
1
10
200
μA
V
PP
= V
PPH1/2
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