參數(shù)資料
型號(hào): 28F008S5
廠商: Intel Corp.
英文描述: 8-MBIT 5 VOLT FlashFile Memory(8M位5V閃速存儲(chǔ)器)
中文描述: 8兆位5伏FlashFile內(nèi)存(800萬位5V的閃速存儲(chǔ)器)
文件頁數(shù): 9/38頁
文件大?。?/td> 427K
代理商: 28F008S5
E
2.0
28F004S5, 28F008S5, 28F016S5
9
PRELIMINARY
PRINCIPLES OF OPERATION
The 5 Volt FlashFile memories include an on-chip
WSM to manage block erase, program, and lock-bit
configuration functions. It allows for: 100% TTL-
level control inputs, fixed power supplies during
block erasure, program, and lock-bit configuration,
and minimal processor overhead with RAM-like
interface timings.
After initial device power-up or return from deep
power-down mode (see Bus Operations), the
device defaults to read array mode. Manipulation of
external memory control pins allow array read,
standby, and output disable operations.
Status register and identifier codes can be
accessed through the CUI independent of the V
PP
voltage. High voltage on V
PP
enables successful
block erasure, program, and lock-bit configuration.
All functions associated with altering memory
contents
—block
erase,
configuration, status, and identifier codes—are
accessed via the CUI and verified through the
status register.
program,
lock-bit
Commands are written using standard micro-
processor write timings. The CUI contents serve as
input to the WSM that controls block erase,
program, and lock-bit configuration operations. The
internal algorithms are regulated by the WSM,
including pulse repetition, internal verification, and
margining of data. Addresses and data are
internally latched during write cycles. Writing the
appropriate command outputs array data, accesses
the identifier codes, or outputs status register data.
Interface software that initiates and polls progress
of block erase, program, and lock-bit configuration
can be stored in any block. This code is copied to
and executed from system RAM during flash
memory updates. After successful completion,
reads are again possible via the Read Array
command. Block erase suspend allows system
software to suspend a block erase to read data
from or program data to any other block. Program
suspend allows system software to suspend a
program to read data from any other flash memory
array location.
64-Kbyte Block
1FFFFF
31
1F0000
1EFFFF
1E0000
1DFFFF
1D0000
1CFFFF
1C0000
1BFFFF
30
29
28
27
1B0000
1AFFFF
1A0000
19FFFF
190000
18FFFF
180000
17FFFF
26
25
24
23
170000
16FFFF
160000
15FFFF
150000
14FFFF
140000
13FFFF
22
21
20
19
130000
12FFFF
120000
11FFFF
110000
10FFFF
100000
0FFFFF
18
17
16
15
0F0000
0EFFFF
0E0000
0DFFFF
0D0000
0CFFFF
0C0000
0BFFFF
14
13
12
11
0B0000
0AFFFF
0A0000
09FFFF
090000
08FFFF
080000
07FFFF
10
9
8
7
070000
06FFFF
060000
05FFFF
050000
04FFFF
040000
03FFFF
6
5
4
3
030000
02FFFF
020000
01FFFF
010000
00FFFF
000000
2
1
0
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
64-Kbyte Block
8-Mbit
16-Mbit
4-Mbit
Figure 4. Memory Map
相關(guān)PDF資料
PDF描述
28F016S5 16-MBIT 5V FlashFile Memory(16M位5V閃速存儲(chǔ)器)
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28F008S 8-MBit (1 MBit x 8) FLASHFILE Memory(8-M位 (1 M位 x 8)閃速存儲(chǔ)器)
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