E
1.0
28F004S5, 28F008S5, 28F016S5
5
PRELIMINARY
INTRODUCTION
This datasheet contains 4-, 8-, and 16-Mbit 5 Volt
FlashFile memory specifications. Section 1.0
provides a flash memory overview. Sections 2.0,
through 5.0 describe the memory organization and
functionality.
Section
specifications
for
commercial
temperature product offerings. Section 7.0 contains
ordering information. Finally, the 5 Volt FlashFile
memory
family
documentation
application notes and design tools which are
referenced in Section 8.0.
6.0
covers
and
electrical
extended
also
includes
1.1
New Features
The 5 Volt FlashFile memory family maintains
backwards-compatibility with Intel’s 28F008SA. Key
enhancements include:
SmartVoltage Technology
Enhanced Suspend Capabilities
In-System Block Locking
They share a compatible status register, software
commands, and pinouts. These similarities enable
a clean upgrade from the 28F008SA to 5 Volt
FlashFile products. When upgrading, it is important
to note the following differences:
Because of new feature and density options,
the devices have different device identifier
codes. This allows for software optimization.
V
PPLK
has been lowered from 6.5 V to 1.5 V to
support low V
PP
voltages during block erase,
program, and lock-bit configuration operations.
Designs that switch V
PP
off during read
operations should transition V
PP
to GND.
To take advantage of SmartVoltage tech-
nology, allow V
PP
connection to 5 V.
For more details see application note
AP-625,
28F008SC Compatibility with 28F008SA
(order
number 292180)
.
1.2
Product Overview
The 5 Volt FlashFile memory family provides
density upgrades with pinout compatibility for the 4-
, 8-, and 16-Mbit densities. The 28F004S5,
28F008S5, and 28F016S5 are high-performance
memories arranged as 512 Kbyte, 1 Mbyte, and
2 Mbyte of 8 bits. This data is grouped in eight,
sixteen, and thirty-two 64-Kbyte blocks which are
individually erasable, lockable, and unlockable in-
system.
Figure
4
illustrates
organization.
the
memory
SmartVoltage technology enables fast factory
programming and low power designs. Specifically
designed for 5 V systems, 5 Volt FlashFile
components support read operations at 5 V V
CC
and block erase and program operations at 5 V and
12 V V
PP
. The 12 V V
PP
option renders the fastest
program performance which will increase your
factory throughput. With the 5 V V
PP
option, V
CC
and V
PP
can be tied together for a simple 5 V
design. In addition to the voltage flexibility, the
dedicated V
PP
pin gives complete data protection
when V
PP
≤
V
PPLK
.
Internal V
PP
detection circuitry
configures the device for optimized block erase and
program operations.
automatically
A Command User Interface (CUI) serves as the
interface between the system processor and
internal operation of the device. A valid command
sequence written to the CUI initiates device
automation. An internal Write State Machine (WSM)
automatically executes the algorithms and timings
necessary for block erase, program, and lock-bit
configuration operations.
A block erase operation erases one of the device’s
64-Kbyte blocks typically within one second (12 V
V
PP
), independent of other blocks. Each block can
be independently erased 100,000 times (1.6 million
block erases per device). A block erase suspend
operation allows system software to suspend block
erase to read data from or program data to any
other block.
Data is programmed in byte increments typically
within 6
μ
s (12 V V
PP
). A program suspend
operation permits system software to read data or
execute code from any other flash memory array
location.