- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371434 > 28F008S5 (Intel Corp.) 8-MBIT 5 VOLT FlashFile Memory(8M位5V閃速存儲器) PDF資料下載
參數(shù)資料
| 型號： | 28F008S5 |
| 廠商： | Intel Corp. |
| 英文描述： | 8-MBIT 5 VOLT FlashFile Memory(8M位5V閃速存儲器) |
| 中文描述： | 8兆位5伏FlashFile內(nèi)存（800萬位5V的閃速存儲器） |
| 文件頁數(shù)： | 33/38頁 |
| 文件大?。?/td> | 427K |
| 代理商： | 28F008S5 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁當前第33頁第34頁第35頁第36頁第37頁第38頁
E
6.6
T
A
= 0 °C to +70 °C
28F004S5, 28F008S5, 28F016S5
33
PRELIMINARY
AC Characteristics
— Write Operations
(1, 2)
—Commercial Temperature
Versions
(4)
5 V ± 5%,
5 V ± 10% V
CC
Valid for All
Speeds
Unit
#
Sym
Parameter
Notes Min
Max
W1
t
PHWL
(t
PHEL
)
RP# High Recovery to WE# (CE#) Going Low
3
1
μs
W2
t
ELWL
(t
WLEL
)
CE# (WE#) Setup to WE# (CE#) Going Low
7
0
ns
W3
t
WP
Write Pulse Width
7
50
ns
W4
t
DVWH
(t
DVEH
)
Data Setup to WE# (CE#) Going High
4
40
ns
W5
t
AVWH
(t
AVEH
)
Address Setup to WE# (CE#) Going High
4
40
ns
W6
t
WHEH
(t
EHWH
)
CE# (WE#) Hold from WE# (CE#) High
0
ns
W7
t
WHDX
(t
EHDX
)
Data Hold from WE# (CE#) High
5
ns
W8
t
WHAX
(t
EHAX
)
Address Hold from WE# (CE#) High
5
ns
W9
t
WPH
Write Pulse Width High
8
25
ns
W10
t
PHHWH
(t
PHHEH
)
RP# V
HH
Setup to WE# (CE#) Going High
3
100
ns
W11
t
VPWH
(t
VPEH
)
V
PP
Setup to WE# (CE#) Going High
3
100
ns
W12
t
WHGL
(t
EHGL
)
Write Recovery before Read
0
ns
W13
t
WHRL
(t
EHRL
)
WE# (CE#) High to RY/BY# Going Low
90
ns
W14
t
QVPH
RP# V
HH
Hold from Valid SRD, RY/BY# High
3,5
0
ns
W15
t
QVVL
V
PP
Hold from Valid SRD, RY/BY# High
3,5
0
ns
NOTES:
1.
Read timing characteristics during block erase, program, and lock-bit configuration operations are the same as during
read-only operations. Refer to AC Characteristics
—Read-Only Operations
.
A write operation can be initiated and terminated with either CE# or WE#.
Sampled, not 100% tested.
Refer to Table 3 for valid A
IN
and D
IN
for block erase, program, or lock-bit configuration.
V
should be held at V
(and if necessary RP# should be held at V
HH
) until determination of block erase, program, or
lock-bit configuration success (SR.1/3/4/5 = 0).
See
Ordering Information
for device speeds (valid operational combinations).
Write pulse width (t
) is defined from CE# or WE# going low (whichever goes low last) to CE# or WE# going high
(whichever goes high first). Hence, t
= t
= t
= t
WLEH
= t
ELWH
. If CE# is driven low 10 ns before WE# going low,
WE# pulse width requirement decreases to t
WP
- 20 ns.
Write pulse width high (t
) is defined from CE# or WE# going high (whichever goes high first) to CE# or WE# going low
(whichever goes low last). Hence, t
WPH
= t
WHWL
= t
EHEL
= t
WHEL
= t
EHWL
.
2.
3.
4.
5.
6.
7.
8.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F016S5 | 16-MBIT 5V FlashFile Memory(16M位5V閃速存儲器) |
| 28F008SC | 8-MBIT SmartVoltage FlashFile Memory(8M位智能電壓閃速存儲器) |
| 28F016SC | 16-MBIT SmartVoltage FlashFile Memory(16M位智能電壓閃速存儲器) |
| 28F008S | 8-MBit (1 MBit x 8) FLASHFILE Memory(8-M位 (1 M位 x 8)閃速存儲器) |
| 28F0101024K | 28F010 1024K (128K X 8) CMOS FLASH MEMORY |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F008SA | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:8 MBIT (1 MBIT x 8) FLASH MEMORY |
| 28F008SA-L | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:8 MBIT (1 MBIT x 8) FLASH MEMORY |
| 28F008SAT-ZW | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F008SC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4. 8. AND 16 MBIT |
| 28F010 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1024K (128K x 8) CMOS FLASH MEMORY |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。