參數(shù)資料
型號(hào)： 28F016SA16-MBIT
廠商： Intel Corp.
英文描述： Evaluation Kit/Evaluation System for the MAX5954L/MAX5954A
中文描述： （1兆比特× 16。2兆比特× 8）FlashFile記憶
文件頁(yè)數(shù)： 35/48頁(yè)
文件大?。?/td> 304K
代理商： 28F016SA16-MBIT
E
SMART 3 ADVANCED BOOT BLOCK
35
PRELIMINARY
Ordering Information Valid Combinations
40-Lead TSOP
48-Ball μBGA*
CSP
(1)
48-Lead TSOP
48-Ball μBGA CSP
Ext. Temp.
32 M
GT28F032B3TA95
GT28F032B3BA95
GT28F032B3TA115
GT28F032B3BA115
TE28F320B3TA95
TE28F320B3BA95
TE28F320B3TA115
TE28F320B3BA115
GT28F320B3TA95
GT28F320B3BA95
GT28F320B3TA115
GT28F320B3BA115
Ext. Temp.
16 M
TE28F016B3TA90
(2)
GT28F016B3TA90
(2)
TE28F160B3TA90
(2)
GT28F160B3TA90
(2)
TE28F016B3BA90
(2)
GT28F016B3BA90
(2)
TE28F160B3BA90
(2)
GT28F160B3BA90
(2)
TE28F016B3TA110
(2)
GT28F016B3TA110
(2)
TE28F160B3TA110
(2)
GT28F160B3TA110
(2)
TE28F016B3BA110
(2)
GT28F016B3BA110
(2)
TE28F160B3BA110
(2)
GT28F160B3BA110
(2)
Ext. Temp.
8 M
TE28F008B3TA90
(2)
GT28F008B3T90
TE28F800B3TA90
(2)
GT28F800B3T90
TE28F008B3BA90
(2)
GT28F008B3B90
TE28F800B3BA90
(2)
GT28F800B3B90
TE28F008B3TA110
(2)
GT28F008B3T110
TE28F800B3TA110
(2)
GT28F800B3T110
TE28F008B3BA110
(2)
GT28F008B3B110
TE28F800B3BA110
(2)
GT28F800B3B110
Ext. Temp
4 M
TE28F400B3T110
TE28F400B3B110
NOTES:
1.
The 48-ball μBGA package top side mark reads F160B3 [or F800B3]. This mark is identical for both x8 and x16 products.
All product shipping boxes or trays provide the correct information regarding bus architecture. However, once the devices
are removed from the shipping media, it may be difficult to differentiate based on the top side mark. The device identifier
(accessible through the Device ID command: see Section 3.2.2 for further details) enables x8 and x16 μBGA package
product differentiation.
The second line of the 48-ball μBGA package top side mark specifies assembly codes. For samples only, the first
character signifies either “E” for engineering samples or “S” for silicon daisy chain samples. All other assembly codes
without an “E” or “S” as the first character are production units.
Product can be ordered in either 0.25 μm or 0.4 μm material. The “A” before the access speed specifies 0.25 μm material.
For new designs, Intel recommends using 0.25 μm Advanced Boot Block devces.
2.
3.
4.
相關(guān)PDF資料
PDF描述
28F016SV 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
28F016SA 16-Mbit(1 Mbit x 16, 2 Mbit x 8) FlashFile Memory(16-M位(1 M位 x 16, 2 M位 x 8) FlashFile存儲(chǔ)器)
28F016XD 16-Mbit Synchronous Flash Memory(16M位DRAM接口閃速存儲(chǔ)器)
28F016XS 16-Mbit Synchronous Flash Memory(16M位同步閃速存儲(chǔ)器)
28F020 5 V Bulk Erase Flash Memory(5V 整體擦寫閃速存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F016SC 制造商:未知廠家 制造商全稱:未知廠家 功能描述:28F016SC - BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4. 8. AND 16 MBIT
28F016SV 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
28F016XD 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY
28F016XS 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
28F0181-1SR-10 功能描述:電磁干擾濾波珠子、扼流圈和陣列 115ohms 100MHz 10A Broad Band Frequency RoHS:否 制造商:AVX 阻抗: 最大直流電流:35 mA 最大直流電阻: 容差: 端接類型:SMD/SMT 電壓額定值:25 V 工作溫度范圍:- 25 C to + 85 C 封裝 / 箱體:0603 (1608 metric)
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*