參數(shù)資料
型號(hào)： 28F032B3
廠商： Intel Corp.
英文描述： SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
中文描述： 智能高級(jí)啟動(dòng)3座4 - ，8 - ，16 - ，32 - Mbit閃存家庭
文件頁數(shù)： 10/48頁
文件大?。?/td> 304K
代理商： 28F032B3
SMART 3 ADVANCED BOOT BLOCK
E
10
PRELIMINARY
The pin descriptions table details the usage of each device pin.
Table 2. Smart 3 Advanced Boot Block Pin Descriptions
Symbol
Type
Name and Function
A
0
–A
21
INPUT
ADDRESS INPUTS
for memory addresses. Addresses are internally
latched during a program or erase cycle.
28F008B3: A[0-19], 28F016B3: A[0-20], 28F032B3: A[0-21],
28F800B3: A[0-17], 28F800B3: A[0-18], 28F160B3: A[0-19],
28F320B3: A[0-20]
DATA INPUTS/OUTPUTS:
Inputs array data on the second CE# and
WE# cycle during a Program command. Inputs commands to the
Command User Interface when CE# and WE# are active. Data is
internally latched. Outputs array, identifier and status register data. The
data pins float to tri-state when the chip is de-selected or the outputs are
disabled.
DQ
0
–DQ
7
INPUT/OUTPUT
DQ
8
–DQ
15
INPUT/OUTPUT
DATA INPUTS/OUTPUTS:
Inputs array data on the second CE# and
WE# cycle during a Program command. Data is internally latched.
Outputs array and identifier data. The data pins float to tri-state when the
chip is de-selected.
Not included on x8 products.
CE#
INPUT
CHIP ENABLE:
Activates the internal control logic, input buffers,
decoders and sense amplifiers. CE# is active low. CE# high de-selects
the memory device and reduces power consumption to standby levels.
OE#
INPUT
OUTPUT ENABLE:
Enables the device’s outputs through the data
buffers during a read operation. OE# is active low.
WE#
INPUT
WRITE ENABLE:
Controls writes to the Command Register and memory
array. WE# is active low. Addresses and data are latched on the rising
edge of the second WE# pulse.
RP#
INPUT
RESET/DEEP POWER-DOWN:
Uses two voltage levels (V
IL
, V
IH
) to
control reset/deep power-down mode.
When RP# is at logic low, the device is in reset/deep power-down
mode
, which drives the outputs to High-Z, resets the Write State
Machine, and minimizes current levels (I
CCD
).
When RP# is at logic high, the device is in standard operation
.
When RP# transitions from logic-low to logic-high, the device resets all
blocks to locked and defaults to the read array mode.
WP#
INPUT
WRITE PROTECT:
Provides a method for locking and unlocking the two
lockable parameter blocks.
When WP# is at logic low, the lockable blocks are locked
,
preventing program and erase operations to those blocks. If a program
or erase operation is attempted on a locked block, SR.1 and either SR.4
[program] or SR.5 [erase] will be set to indicate the operation failed.
When WP# is at logic high, the lockable blocks are unlocked
and
can be programmed or erased.
See Section 3.3 for details on write protection.
相關(guān)PDF資料
PDF描述
28F160B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F800B3 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
28F016SA16-MBIT Evaluation Kit/Evaluation System for the MAX5954L/MAX5954A
28F016SV 16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
28F016SA 16-Mbit(1 Mbit x 16, 2 Mbit x 8) FlashFile Memory(16-M位(1 M位 x 16, 2 M位 x 8) FlashFile存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F032C3 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3 VOLT ADVANCED+ BOOT BLOCK. 8-. 16-. 32-MBIT FLASH MEMORY FAMILY
28F0330-2SR 制造商:Steward/Laird Tech 功能描述:
28F04181SR 制造商:STEWARD 功能描述:New
28F0428-0T0 功能描述:FERRITE FILTER 4 LINE PCB RoHS:是 類別:濾波器 >> 鐵氧體磁珠和芯片 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:EMI1812 頻率對(duì)應(yīng)阻抗:120 歐姆 @ 100MHz 額定電流:200mA DC 電阻(DCR):最大 400 毫歐 濾波器類型:差模 - 單線 封裝/外殼:1812（4532 公制） 安裝類型:表面貼裝 包裝:帶卷 (TR) 高度（最大）:0.069"（1.75mm） 尺寸/尺寸:0.177" L x 0.126" W（4.50mm x 3.20mm） 其它名稱:Q1712807A
28F0430-2SR 制造商:Laird Technologies Inc 功能描述:28F0430-2SR
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