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參數(shù)資料
| 型號： | 28F032B3 |
| 廠商： | Intel Corp. |
| 英文描述： | SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 中文描述： | 智能高級啟動3座4 - ，8 - ，16 - ，32 - Mbit閃存家庭 |
| 文件頁數(shù)： | 26/48頁 |
| 文件大?。?/td> | 304K |
| 代理商： | 28F032B3 |
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SMART 3 ADVANCED BOOT BLOCK
E
26
PRELIMINARY
4.4
DC Characteristics
(Continued)
V
CC
2.7 V
–3.6 V
2.7 V–2.85 V
2.7 V–3.3 V
V
CCQ
2.7 V–3.6 V
1.65 V–2.5 V
1.8 V–2.5 V
Sym
Parameter
Note
Min
Max
Min
Max
Min
Max
Unit Test Conditions
V
IL
Input Low Voltage
–0.4
V
CCQ
–0.4V
0.4
–0.2
V
CCQ
–0.2V
-0.10
0.2
–0.2
V
CCQ
–0.2V
-0.10
0.2
V
V
IH
Input High Voltage
V
V
OL
Output Low
Voltage
0.10
0.10
0.10
V
V
CC
= V
CC
Min
V
CCQ
= V
CCQ
Min
I
OL
= 100
μ
A
V
OH
Output High
Voltage
V
CCQ
–0.1V
V
CCQ
–0.1V
V
CCQ
–0.1V
V
V
CC
= V
CC
Min
V
CCQ
= V
CCQ
Min
I
OH
= –100
μ
A
V
PPLK
V
Lock-Out
Voltage
2
1.5
1.5
1.5
V
Complete Write
Protection
V
PP1
V
PP
during
2
2.7
3.6
V
V
PP2
Program and
2
2.7
2.85
V
V
PP3
Erase Operations
2
2.7
3.3
V
V
PP4
2,5
11.4
12.6
11.4
12.6
11.4
12.6
V
V
LKO
V
CC
Prog/Erase
Lock Voltage
1.5
1.5
1.5
V
V
LKO2
V
CCQ
Prog/Erase
Lock Voltage
1.2
1.2
1.2
V
NOTES:
1.
2.
All currents are in RMS unless otherwise noted. Typical values at nominal V
CC
, T
A
= +25 °C.
Erase and program are inhibited when V
< V
and not guaranteed outside the valid V
ranges of V
, V
PP2
, V
PP3
and V
For read operations or during idle time, a 5 V supply may be applied to V
PP
indefinitely. However, V
PP
valid levels for program and erase operations.
Sampled, not 100% tested.
Automatic Power Savings (APS) reduces I
CCR
to approximately standby levels in static operation.
Applying V
= 11.4 V–12.6 V during program/erase can only be done for a maximum of 1000 cycles on the main blocks
and 2500 cycles on the parameter blocks. V
may be connected to 12 V for a total of 80 hours maximum. See Section 3.4
for details. For read operations or during idle time, a 5 V supply may be applied to V
PP
indefinitely. However, V
PP
must be
at valid levels for program and erase operations.
Since each column lists specifications for a different V
and V
CCQ
voltage range combination, the test conditions V
Max,
V
CCQ
Max, V
CC
Min, and V
CCQ
Min refer to the maximum or minimum V
CC
or V
CCQ
voltage listed at the top of each column.
3.
4.
5.
6.
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相關(guān)代理商/技術(shù)參數(shù) |
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| 28F032C3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:3 VOLT ADVANCED+ BOOT BLOCK. 8-. 16-. 32-MBIT FLASH MEMORY FAMILY |
| 28F0330-2SR | 制造商:Steward/Laird Tech 功能描述: |
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| 28F0428-0T0 | 功能描述:FERRITE FILTER 4 LINE PCB RoHS:是 類別:濾波器 >> 鐵氧體磁珠和芯片 系列:- 標準包裝:1,000 系列:EMI1812 頻率對應阻抗:120 歐姆 @ 100MHz 額定電流:200mA DC 電阻(DCR):最大 400 毫歐 濾波器類型:差模 - 單線 封裝/外殼:1812（4532 公制） 安裝類型:表面貼裝 包裝:帶卷 (TR) 高度（最大）:0.069"（1.75mm） 尺寸/尺寸:0.177" L x 0.126" W（4.50mm x 3.20mm） 其它名稱:Q1712807A |
| 28F0430-2SR | 制造商:Laird Technologies Inc 功能描述:28F0430-2SR |
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