參數(shù)資料
型號: 82845PE
廠商: Intel Corp.
英文描述: 82845GE Graphics and Memory Controller Hub (GMCH) and 82845PE Memory Controller Hub (MCH)
中文描述: 82845GE圖形和內存控制器中樞(GMCH)和82845PE內存控制器中樞(MCH)
文件頁數(shù): 16/157頁
文件大小: 1407K
代理商: 82845PE
Intel
82845MP/82845MZ Chipset-Mobile (MCH-M)
16
Datasheet
250687-002
R
addresses lie within the AGP aperture are translated using the AGP address translation table, regardless
of the originating interface.
1.2.1.
System Bus Error Checking
The Intel
845MP/845MZ Chipset MCH-M does not generate nor check parity for Data, Address/Request,
and Response signals on the processor bus.
1.3.
System Memory Interface
The Intel
845MP/845MZ Chipset memory controller directly supports one channel of PC1600 or
PC2100 (845MZ PC1600 only) SO-DIMM DDR memory. The Intel
845MP/845MZ Chipset memory
interface supports DDR devices with densities of 64-Mb, 128-Mb, 256-Mb, and 512-Mb technology.
The maximum memory support is two, double-sided SO-DIMMs (four rows populated). The Intel
845MP/845MZ Chipset memory interface also supports variable page sizes of 2 KB, 4 KB, 8 KB, and 16
KB. Page size is individually selected for every row and a maximum of 16 pages may be opened
simultaneously.
Table 1. DDR Memory Capacity
Technology
845MP/845MZ Maximum
64 Mb
128 MB/128 MB
128 Mb
256 MB/256 MB
256 Mb
512 MB/512 MB
512 Mb
1 GB/ 512 MB
The memory interface provides optional ECC error checking for DRAM data integrity. During DRAM
writes, ECC is generated on a QWORD (64 bit) basis. Because the Intel
845MP/845MZ Chipset MCH-
M stores only entire cache lines in its internal buffers, partial QWORD writes initially cause a read of the
underlying data, and their write-back into memory is no different from that of a complete cache line.
During DRAM reads and the read of the data that underlies partial writes, the MCH-M supports
detection of single-bit and multiple-bit errors, and will correct single bit errors when correction is
enabled.
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