
Intel
82845G/82845GL/82845GV GMCH Datasheet
151
Electrical Characteristics
Table 6-6.
DC Characteristics (Sheet 1 of 2)
Symbol
Signal
Group
Parameter
Min
Nom
Max
Unit
Notes
1.5 V AGP and Intel
DVO Interface: Functional Operating Range (VCC=1.5 V
±
5%)
V
IL_AGP
(a,b,w)
AGP/DVO Input Low Voltage
–0.5
0.4VDDQ
V
V
IH_AGP
(a,b,w)
AGP/DVO Input High Voltage
0.6VDDQ
VDDQ+0.5
V
V
OL_AGP
(a,c,x)
AGP/DVO Output Low Voltage
0.15VDDQ
V
Iol = 1 mA
V
OH_AGP
(a,c,x)
AGP/DVO Output High Voltage
0.85VDDQ
V
Ioh = -0.2 mA
I
LEAK_AGP
(a,b,w)
AGP/DVO Input Leakage Current
±
10
μ
A
0<Vin<VCC1_5
C
IN_AGP
(a,b,w)
AGP/DVO Input Capacitance
4
pF
F
C
=1 MHz
1.5 V Hub Interface: Functional Operating Range (VCC=1.5 V
±
5%)
V
IL_HI
(e)
Hub Interface Input Low Voltage
-0.3
HI_VREF–0.1
V
V
IH_HI
(e)
Hub Interface Input High Voltage
HI_VREF+0.1
1.2
V
V
OL_HI
(e)
Hub Interface Output Low Voltage
0.066
V
I
OL
= 1 mA
V
OH_HI
(e)
Hub Interface Output High Voltage
0.6
1.2
V
I
OUT
=0.7/RCOMP
I
LEAK_HI
(e)
Hub Interface Input Leakage Current
25
μ
A
C
IN_HI
(e)
Hub Interface Input Capacitance
5
pF
F
C
=1 MHz
VTT DC Characteristics: Functional Operating Range (VTT= 1.15 V – 1.75 V)
V
IL_AGTL+
(g,h)
Host AGTL+ Input Low Voltage
(2/3*VTT) –
0.1*GTLREF
V
V
IH_AGTL+
(g,h)
Host AGTL+ Input High Voltage
(2/3*VTT) +
0.1*GTLREF
V
V
OL_AGTL+
(g,I)
Host AGTL+ Output Low Voltage
1/3*VTT–0.1
1/3*VTT 1/3*VTT+0.1
V
V
OH_AGTL+
(g,I)
Host AGTL+ Output High Voltage
VTT–0.1
VTT
V
I
OL_AGTL+
(g,I)
Host AGTL+ Output Low Current
VTT
/
0.75Rtt
min
±
10
mA
Rtt
min
=45
I
LEAK_AGTL+
(g,h)
Host AGTL+ Input Leakage Current
μ
A
V
OL
<Vpad<VTT
C
PAD_AGTL+
(g,h)
Host AGTL+ Input
Capacitance
1
3.5
pF
F
C
=1 MHz
2.5 V DDR System Memory: Functional Operating Range (VCC=2.5 V
±
5%)
V
IL_DDR(DC)
(l,n)
DDR Input Low Voltage
-0.1*VCC
SMVREF
(DDR) – 0.15
V
V
IH_DDR(DC)
(l,n)
DDR Input High Voltage
SMVREF
(DDR)
+ 0.15
1.1*VCC
V
V
IL_DDR(AC)
(l,n)
DDR Input Low Voltage
–0.1*VCC
SMVREF
(DDR)–0.31
V
V
IH_DDR(AC)
(l,n)
DDR Input High Voltage
SMVREF
(DDR)
+ 0.31
1.1*VCC
V
V
OL_DDR
(l,m)
DDR Output Low Voltage
0.6
V
IOL = 13 mA
V
OH_DDR
(l,m)
DDR Output High Voltage
1.9
V
IOH = 13 mA
I
Leak_DDR
(l,n)
Input Leakage Current
±
10
uA
C
IN_DDR
(l,n)
DDR Input/Output Pin Capacitance
5.5
pF
F
C
=1 MHz