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參數(shù)資料
| 型號： | 934056382118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 10/13頁 |
| 文件大?。?/td> | 266K |
| 代理商： | 934056382118 |
Philips Semiconductors
Si4410DY
N-channel enhancement mode eld-effect transistor
Product data
Rev. 02 — 05 July 2001
6 of 13
9397 750 08048
Philips Electronics N.V. 2001. All rights reserved.
Tj =25 °CTj =25 °C and 150 °C; VDS > ID × RDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ad50
0
10
20
30
40
50
0
0.5
1
1.5
VDS (V)
ID
(A)
3 V
3.2 V
3.4 V
3.6 V
3.8 V
10 V
2.8 V
5 V
VGS = 2.6 V
03ad52
0
10
20
30
40
50
01234
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 150 C
25 C
03ad51
0
0.01
0.02
0.03
0
1020
304050
ID (A)
RDSon
(
)
Tj = 25 C VGS = 3.2 V
5 V
10 V
3.4 V
3.6 V
4.5 V
3.8 V
03ad57
0
0.4
0.8
1.2
1.6
2
-60
0
60
120
180
Tj (C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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