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參數(shù)資料
| 型號： | 934056382118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 266K |
| 代理商： | 934056382118 |
Philips Semiconductors
Si4410DY
N-channel enhancement mode eld-effect transistor
Product data
Rev. 02 — 05 July 2001
2 of 13
9397 750 08048
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
30
V
ID
drain current
Tamb =25 °C; pulsed; tp ≤ 10 s
10
A
Ptot
total power dissipation
Tamb =25 °C; pulsed; tp ≤ 10 s
2.5
W
Tj
junction temperature
150
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 10 A; Tj =25 °C
11
13.5
m
VGS = 4.5 V; ID = 5 A; Tj =25 °C
1520m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
30
V
VGS
gate-source voltage (DC)
±20
V
ID
drain current
10
A
8A
IDM
peak drain current
50
A
Ptot
total power dissipation
2.5
W
1.6
W
Tstg
storage temperature
55
+150
°C
Tj
operating junction temperature
55
+150
°C
Source-drain diode
IS
source (diode forward) current
Tamb =25 °C; pulsed; tp ≤ 10 s
2.3
A
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