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參數(shù)資料
| 型號： | 934056382118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 12/13頁 |
| 文件大?。?/td> | 266K |
| 代理商： | 934056382118 |
Philips Semiconductors
Si4410DY
N-channel enhancement mode eld-effect transistor
Product data
Rev. 02 — 05 July 2001
8 of 13
9397 750 08048
Philips Electronics N.V. 2001. All rights reserved.
Tj =25 °C and 150 °C; VGS =0V
ID = 10 A; VDD =15V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
03ad53
0
10
20
30
40
50
0
0.4
0.8
1.2
1.6
VSD (V)
IS
(A)
Tj = 25 C
150 C
VGS = 0 V
03ad55
0
2
4
6
8
10
0
10203040
QG (nC)
VGS
(V)
ID = 10 A
Tj = 25 C
VDD = 15 V
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