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參數(shù)資料
| 型號： | 934056382118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁數(shù)： | 7/13頁 |
| 文件大?。?/td> | 266K |
| 代理商： | 934056382118 |
Philips Semiconductors
Si4410DY
N-channel enhancement mode eld-effect transistor
Product data
Rev. 02 — 05 July 2001
3 of 13
9397 750 08048
Philips Electronics N.V. 2001. All rights reserved.
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature.
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature.
Tamb =25 °C; IDM is single pulse.
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
03aa11
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
Tamb (
oC)
Pder
(%)
03aa19
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
Tamb (
oC)
Ider
(%)
P
der
P
tot
P
tot 25 C
°
()
----------------------
100%
×
=
I
der
I
D
I
D25 C
°
()
-------------------
100%
×
=
03ae23
10-2
10-1
1
10
102
10-1
1
10
102
VDS (V)
ID
(A)
D.C.
100 ms
10 ms
RDSon = VDS / ID
1 ms
tp = 10 s
10 s
tp
T
P
t
T
δ =
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