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| 型號(hào)： | 934056382118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 小信號(hào)晶體管 |
| 英文描述： | 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA |
| 封裝： | PLASTIC, SMD, SO-8 |
| 文件頁(yè)數(shù)： | 11/13頁(yè) |
| 文件大?。?/td> | 266K |
| 代理商： | 934056382118 |
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Philips Semiconductors
Si4410DY
N-channel enhancement mode eld-effect transistor
Product data
Rev. 02 — 05 July 2001
7 of 13
9397 750 08048
Philips Electronics N.V. 2001. All rights reserved.
ID = 250 A; VDS =VGS
Tj =25 °C; VDS =5V
Fig 9.
Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C and 150 °C; VDS > ID × RDSon
VGS =0V;f=1MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
03aa33
0
0.5
1
1.5
2
2.5
-60
0
60
120
180
Tj (
oC)
VGS(th)
(V)
max
typ
min
03aa36
10-6
10-5
10-4
10-3
10-2
10-1
0
0.5
1
1.5
2
2.5
3
VGS (V)
ID
(A)
max
typ
min
03ae24
0
10
20
30
40
0
1020
304050
ID (A)
gfs
(S)
Tj = 25 C
150 C
VDS > ID x RDSon
03ad54
10
103
104
10-1
1
10
102
VDS (V)
C
(pF)
Ciss
Coss
Crss
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