參數(shù)資料
型號(hào): 934056382118
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
封裝: PLASTIC, SMD, SO-8
文件頁(yè)數(shù): 9/13頁(yè)
文件大小: 266K
代理商: 934056382118
Philips Semiconductors
Si4410DY
N-channel enhancement mode eld-effect transistor
Product data
Rev. 02 — 05 July 2001
5 of 13
9397 750 08048
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
VGS(th)
gate-source threshold voltage
ID = 250 A; VDS =VGS; Tj =25 °C; Figure 9
1
V
IDSS
drain-source leakage current
VDS =30V; VGS =0V
Tj =25 °C
1
A
Tj =55 °C
25
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
100
nA
ID(on)
On-state drain current
VDS ≥ 5; VGS =10V
20
A
RDSon
drain-source on-state resistance
VGS = 10 V; ID =10A; Figure 7 and 8
11
13.5
m
VGS = 4.5 V; ID =5A; Figure 7 and 8
15
20
m
Dynamic characteristics
gfs
forward transconductance
VDS =15V; ID =10A; Figure 11
34
S
Qg(tot)
total gate charge
ID = 10 A; VDD =15V; VGS =5V; Figure 14
21.5
34
nC
Qg(tot)
total gate charge
ID = 10 A; VDD =15V; VGS =10V; Figure 14
40
60
nC
Qgs
gate-source charge
8
nC
Qgd
gate-drain (Miller) charge
7
nC
td(on)
turn-on delay time
VDD =25V; RD =25 ; VGS =10V; RG =6
13.5
30
ns
tr
rise time
920
ns
td(off)
turn-off delay time
70
100
ns
tf
fall time
30
80
ns
Source-drain (reverse) diode
VSD
source-drain (diode forward) voltage IS = 2.3A; VGS =0V; Figure 13
0.7
1.1
V
trr
reverse recovery time
IS = 2.3 A; dIS/dt = 100 A/s; VGS =0V
50
80
ns
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