參數(shù)資料
型號: AM29LV256MH128EI
廠商: ADVANCED MICRO DEVICES INC
元件分類: PROM
英文描述: 16M X 16 FLASH 3V PROM, 120 ns, PDSO56
封裝: TSOP-56
文件頁數(shù): 47/63頁
文件大?。?/td> 1515K
代理商: AM29LV256MH128EI
September 9, 2002
Am29LV256M
51
A D VA NCE
I N FO RM ATIO N
AC CHARACTERISTICS
Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
Parameter
Speed Options
JEDEC
Std.
Description
93, 93R,
98, 98R
103, 103R,
108, 108R
113, 113R,
118, 118R
123, 123R,
128, 128R
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
100
110
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ASO
Address Setup Time to OE# low during toggle bit polling
Min
15
ns
t
WLAX
t
AH
Address Hold Time
Min
45
ns
tAHT
Address Hold Time From CE# or OE# high
during toggle bit polling
Min
0
ns
t
DVWH
t
DS
Data Setup Time
Min
45
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OEPH
Output Enable High during toggle bit polling
Min
20
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
ns
t
WHDL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
100
s
Effective Write Buffer Program
Operation (Notes 2, 4)
Per Byte
Typ
2.95
s
Per Word
Typ
5.9
s
Accelerated Effective Write Buffer
Program Operation (Notes 2, 4)
Per Byte
Typ
2.4
s
Per Word
Typ
4.7
s
Program Operation (Note 2)
Byte
Typ
50
s
Word
Typ
100
s
Accelerated Programming Operation
Byte
Typ
40
s
Word
Typ
80
s
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.4
sec
tVHH
VHH Rise and Fall Time (Note 1)
Min
250
ns
t
VCS
V
CC Setup Time (Note 1)
Min
50
s
相關(guān)PDF資料
PDF描述
AM29LV256MH118REI 16M X 16 FLASH 3V PROM, 110 ns, PDSO56
AM29PDL127H83PCIN 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
AM29PDL127H83VKIN 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
AM29PDL127H85PCI 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
AM29PDL127H85PCIN 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
AM29LV256MH94REI 制造商:Spansion 功能描述:256M (32MX8/16MX16) 3V REG, MIRRORBIT, TSOP56, IND - Trays
AM29LV320DB120EI 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin TSOP
AM29LV320DB120WMI 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 120ns 48-Pin FBGA
AM29LV320DB90EC 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP
AM29LV320DB90ED 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 32M-Bit 4M x 8/2M x 16 90ns 48-Pin TSOP