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參數(shù)資料
| 型號： | AM29LV256MH128EI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 16M X 16 FLASH 3V PROM, 120 ns, PDSO56 |
| 封裝： | TSOP-56 |
| 文件頁數(shù)： | 54/63頁 |
| 文件大?。?/td> | 1515K |
| 代理商： | AM29LV256MH128EI |
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58
Am29LV256M
September 9, 2002
A D VA NCE
I N FO RM ATIO N
AC CHARACTERISTICS
Alternate CE# Controlled Erase and Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase And Programming Performance” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
Parameter
Speed Options
JEDEC
Std.
Description
93, 93R,
98, 98R
103, 103R,
108, 108R
113, 113R,
118, 118R
123, 123R,
128, 128R
Unit
tAVAV
tWC
Write Cycle Time (Note 1)
Min
90
100
110
120
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
ELAX
t
AH
Address Hold Time
Min
45
ns
t
DVEH
t
DS
Data Setup Time
Min
45
ns
t
EHDX
t
DH
Data Hold Time
Min
0
ns
t
GHEL
t
GHEL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
WLEL
t
WS
WE# Setup Time
Min
0
ns
t
EHWH
t
WH
WE# Hold Time
Min
0
ns
tELEH
tCP
CE# Pulse Width
Min
45
ns
t
EHEL
t
CPH
CE# Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Write Buffer Program Operation (Notes 2, 3)
Typ
100
s
Effective Write Buffer Program
Operation (Notes 2, 4)
Per Byte
Typ
2.95
s
Per Word
Typ
5.9
s
Effective Accelerated Write
Buffer Program Operation (Notes
Per Byte
Typ
2.4
s
Per Word
Typ
4.7
s
Program Operation (Note 2)
Byte
Typ
50
s
Word
Typ
100
s
Accelerated Programming
Operation (Note 2)
Byte
Typ
40
s
Word
Typ
80
s
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
0.4
sec
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