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參數(shù)資料
| 型號： | AM29LV256MH128EI |
| 廠商： | ADVANCED MICRO DEVICES INC |
| 元件分類： | PROM |
| 英文描述： | 16M X 16 FLASH 3V PROM, 120 ns, PDSO56 |
| 封裝： | TSOP-56 |
| 文件頁數(shù)： | 57/63頁 |
| 文件大?。?/td> | 1515K |
| 代理商： | AM29LV256MH128EI |
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60
Am29LV256M
September 9, 2002
A D VA NCE
I N FO RM ATIO N
ERASE AND PROGRAMMING PERFORMANCE
Notes:
1. Typical program and erase times assume the following conditions: 25°C, 3.0 V V
CC, 100,000 cycles. Additionally,
programming typicals assume checkerboard pattern.
2. Under worst case conditions of 90°C, V
CC = 3.0 V, 100,000 cycles.
3. Effective write buffer specification is based upon a 16-word write buffer operation.
4. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words
program faster than the maximum program times listed.
5. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.
6. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table
10 for further information on command definitions.
7. The device has a minimum erase and program cycle endurance of 100,000 cycles.
TSOP PIN AND BGA PACKAGE CAPACITANCE
Notes:
1. Sampled, not 100% tested.
2. Test conditions T
A = 25°C, f = 1.0 MHz.
DATA RETENTION
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.4
15
sec
Excludes 00h programming
prior to erasure (Note 5)
Chip Erase Time
90
sec
Effective Write Buffer
Program Time (Note 3)
Per Byte
2.95
105
s
Excludes system level
overhead (Note 6)
Per Word
5.9
210
s
Program Time
Byte
50
TBD
s
Word
100
218
s
Effective Accelerated
Program Time (Note 3)
Byte
2.4
TBD
s
Word
4.7
TBD
s
Accelerated Program Time
Byte
40
TBD
s
Word
80
TBD
s
Chip Program Time (Note 4)
TBD
sec
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN = 0
TSOP
6
7.5
pF
Fine-pitch BGA
4.2
5.0
pF
C
OUT
Output Capacitance
V
OUT = 0
TSOP
8.5
12
pF
Fine-pitch BGA
5.4
6.5
pF
C
IN2
Control Pin Capacitance
V
IN = 0
TSOP
7.5
9
pF
Fine-pitch BGA
3.9
4.7
pF
Parameter Description
Test Conditions
Min
Unit
Minimum Pattern Data Retention Time
150°C10
Years
125°C20
Years
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