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參數(shù)資料
| 型號： | AN-937 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Gate Drive Characteristics and Requirements for HEXFET |
| 中文描述： | 門驅動器的特點及要求的HEXFET |
| 文件頁數(shù)： | 13/21頁 |
| 文件大?。?/td> | 418K |
| 代理商： | AN-937 |
AN-937 (v.Int)
The power down of the circuit is smooth and free from voltage spikes. When the pulse train is interrupted at the input, the C2
capacitor keeps the input of the CMOS inverter high and R1 discharges C3. By the time the input to the CMOS inverter drops
below the threshold voltage of Q4, C3 is completely discharged the output remains low.
The addition of a MOS-Gate Driver IC improves the performance of the circuit in Figure 24a, at the expenses of prop delay. The
circuit shown in Figure 26a has the following features:
- No secondary supply required
- Propagation delay ~500ns (CL= 10nF)
- Duty cycle range 5% to 85%
- Nominal operating frequency 50kHz (20kHz to 100kHz)
- Short circuit protection with Vce sensing. Threshold Vce = 7.5V
- Undervoltage lock-out at Vcc = 9.5V
- Over voltage lock out at Vcc = 20V
The short circuit protection is implemented with a Vce sensing circuit in combination with the current sense input (CS) of
IR2127/8. When the HO pin if U2 goes high R3 starts charging C5. Meanwhile the IGBT turns on, the collector voltage drops to
the saturation level, D5 goes into conduction and C5 discharges. When the collector voltage is high, D5 is reverse biased and the
voltage on C5 keeps raising. When C5 voltage exceeds 250mV the IR2127/8 shuts down the output. The fault to shut-down
delay is approximately 2 microsecs.
For operation with a large duty cycle, several options are available. The circuits described in AN-950 use a saturating transformer
to transfer the drive charge to the gate. The circuit shown in Figure 28a, on the other hand, achieves operation over a wide range
of duty cycles by using the MGD as a latch. It has the following features:
- Frequency range from DC to 900kHz.
- Turn-on delay: 250ns.
- Turn-off delay 200ns
- Duty cycle range from 1% to 99% at 100kHz.
- Under voltage and over voltage lockout.
- Optional short circuit protection, as shown in Figure 26a
In the circuit of Figure 28a the transformer is small (8 turns), since it transmits only short pulses to the secondary side. The
MGD on the secondary side of the transformer is latched by the feedback resistor R4. Figures 28b and 28c show the performance
of this circuit at the two extremes of 900 kHz and 2.5 Hz
Horiz.: 500ns/div.
Output: 5V/div.
Input: 2V/div.
Figure 26b.
Waveforms associated with the
circuit of Figure 26a.
Input: 5V/div.
Output: 5V/div.
IR2121 ERR pin: 5V/div.
Horiz: 1
μ
s/div.
FILE: X1-ERR.PLT
Figure 27.
Shutdown due to high V
CEsat
To Order
Index
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