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參數(shù)資料
| 型號(hào)： | AN-937 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Gate Drive Characteristics and Requirements for HEXFET |
| 中文描述： | 門驅(qū)動(dòng)器的特點(diǎn)及要求的HEXFET |
| 文件頁數(shù)： | 15/21頁 |
| 文件大?。?/td> | 418K |
| 代理商： | AN-937 |
AN-937 (v.Int)
Logic level HEXFET
s are specifically designed for operation from 5V logic and have guaranteed on-resistance at 5 or 4.5 V
gate voltage. Some have guaranteed on-resistance at 2.7 V.
Some important considerations for driving logic level HEXFET
s are discussed in this section and typical switching performance
of these is illustrated when driven by some common logic drive circuits.
8.1 Comparison to Standard HEXFET
s
Some devices are available as Logic-level HEXFET
s as well as standard HEXFET
s. The logic-level version uses a thinner gate
oxide and different doping concentrations. This has the following effects on the input characteristics:
Gate Threshold voltage is lower.
Transconductance is higher.
Input capacitance is higher.
Gate-source breakdown voltage is lower.
While input characteristics are different, reverse transfer capacitance, on-resistance, drain-source breakdown voltage, avalanche
energy rating, and output capacitance are all essentially the same. Table 3 summarizes the essential comparisons between
standard and logic level HEXFET
s.
Characteristics and Ratings
Standard HEXFET
(IRF Series)
2 - 4V
Logic level HEXFET
has same value of R
DS(on)
V
GS
= 5V as standard HEXFET
at V
GS
= 10V
R
DS(on)
of logic level HEXFET
also speed at
V
GS
= 4V
Typically 39% larger for logic level HEXFET
Typically 33% larger for logic level HEXFET
Essentially the same
Essentially the same
Comparable Logic Level HEXFET
(IRL Series)
1 - 2V
Gate Threshold Voltage
V
GS(on)
On-Resistance
R
DS(on)
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Gate-Source
Gate-Drain
Total
gfs
Crs
Crss
Crss
Qgs
Qgd
Qg
Essentially the same
Essentially the same
Essentially same as
V
GS
= 10V
Essentially same at
V
GS
= 5V
Same
Drain Source Breakdown
Voltage
Continuous Drain Current
Single Pulse Avalanche Energy
Max. Gate-Source Voltage
BV
DSS
I
D
E
AS
V
GS
Same
Same
+ 20V
+10V
Table 3: Essential Comparisons of Standard and Logic Level HEXFET
s
The gate charge for full enhancement of the logic level HEXFET
is, however, about the same as for a standard
HEXFET
because the higher input capacitance is counteracted by lower threshold voltage and higher transconductance. Since
the logic level HEXFET
needs only one half the gate voltage, the drive energy is only about one half of that needed for the
standard HEXFET
. Since the gate voltage is halved, the gate drive resistance needed to deliver the gate charge in a given time
is also halved, relative to a standard HEXFET
. In other words, for the same switching speed as a standard HEXFET
power
MOSFET, the drive circuit impedance for the logic level HEXFET
must be approximately halved.
The equivalence of switching times at one half the gate resistance for the logic level HEXFET
is illustrated by the typical
switching times for the IRL540 and the IRF540 HEXFET
s shown in Table 4, using data sheet test conditions.
To Order
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