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參數(shù)資料
| 型號： | AN-937 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Gate Drive Characteristics and Requirements for HEXFET |
| 中文描述： | 門驅(qū)動器的特點及要求的HEXFET |
| 文件頁數(shù)： | 16/21頁 |
| 文件大?。?/td> | 418K |
| 代理商： | AN-937 |
AN-937 (v.Int)
Gate Resistance
R
G
(
)
9
4.5
Gate Voltage
V
GS
(V)
10
5
Table 4: Typical Resistive Switching Times for IRL540 and IRF540
Drain Current
I
D
(A)
28
28
Typical Values (ns)
t
D
on
t
r
t
D
on
t
r
15
15
72
72
40
44
50
56
TTL families do not actually deliver 5V in their V
OH
condition, even into an open circuit. The 5V level can, however, be reached
by the addition of a pull-up resistor from the output pin to the 5V bus, as illustrated in Figure 30. Without the pull-up resistor,
the R
DS(on)
value at V
GS
= 5V may not be attained, and the value specified at V
GS
= 4V should be used for worst case design.
8.2 Driving Logic Level HEXFET
s
The gate threshold voltage of MOSFETs decreases with temperature. At high temperature it can approach the V
OL(max)
specification of the logic driver. Care should be exercised to insure that V
TH(min)
at the highest operating temperature is greater
than V
OL(max)
of the various logic families in order to guarantee complete turn off.
555
7
2
8
4
8
3
5
15 V
CONTROL
INPUT
470
LOAD
Figure 29.
+5V
LOGIC
INPUTS
RET
LOAD
Figure 30.
Pull-up resistor used
to deliver 5V gate drive
+V
DD
R1
Figure 31a.
High common mode inductance
R
L
D
L
D
G
L
S
S
L
W
RET.
SIG. RET.
DRIVE
+V
DD
R1
Figure 31b.
Minimum common mode
inductance
R
L
D
L
D
G
L
S
S
L
W
RET.
SIG. RET.
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Index
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