- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄295146 > BLF4G22LS-130 (NXP SEMICONDUCTORS) UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB PDF資料下載
參數(shù)資料
| 型號： | BLF4G22LS-130 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 10/13頁 |
| 文件大小： | 83K |
| 代理商： | BLF4G22LS-130 |
xxxx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx x xxxxxxxxxxxxxx xxxxxxxxxx xxx xxxxxx xxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx
xxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxxxx xxxxxxxxxxxxxxxxxxx
xxxxxxxxxxxxxxxx xxxxxxxxxxxxxx xxxxxx xx xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx
xxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxx xxxxx x x
BLF4G22-130_4G22LS-130_1
NXP
B
.V
.2007.
All
r
ights
reser
v
ed.
Pr
oduct
data
sheet
Re
v
.01
—
3
J
u
ly
2007
6
of
13
NXP
Semiconductor
s
BLF4G22-130;
BLF4G22LS-130
UHF
po
wer
LDMOS
transistor
8.
T
est
inf
ormation
See Table 9 for list of components.
Fig 7.
Schematic test circuit for operation at 2.14 GHz
C15
C16
C14
C11
C10
DUT
L6
C6
L7
C5
C3
C2
C4
C12
C13
VDD
R1
VGG
C1
C7
L2
L1
L3
L4
L5
L8
L9
L10
L11
L12
L13
L14
C8 C9
001aac275
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BLF6G10LS-200R | Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 869 - 894 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB |
| BLF6G10LS-200 | Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB |
| BLF872 | UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB |
| BLH2-21-35PC-1 | MIL SERIES CONNECTOR, RECEPTACLE |
| BLH2-21-39PN-1 | MIL SERIES CONNECTOR, RECEPTACLE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLF4G22LS-130,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G22S-100 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G22S-100,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF5 | 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Axial Lead and Cartridge Fuses - Midget |
| BLF521 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power MOS transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。