參數(shù)資料
型號： BLF4G22LS-130
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC PACKAGE-2
文件頁數(shù)： 9/13頁
文件大?。?/td> 83K
代理商： BLF4G22LS-130
BLF4G22-130_4G22LS-130_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 3 July 2007
5 of 13
NXP Semiconductors
BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
(1) IDq = 850 mA
(2) IDq = 975 mA
(3) IDq = 1150 mA
(4) IDq = 1350 mA
(5) IDq = 1550 mA
VDS = 28 V; f1 = 2140.0 MHz; f2 = 2140.1 MHz.
(1) IDq = 850 mA
(2) IDq = 975 mA
(3) IDq = 1150 mA
(4) IDq = 1350 mA
(5) IDq = 1550 mA
VDS = 28 V; f1 = 2140.0 MHz; f2 = 2140.1 MHz.
Fig 3.
Two-tone power gain as a function of peak
envelope load power; typical values
Fig 4.
Third order intermodulation distortion as a
function of peak envelope load power; typical
values
ton = 8 s; toff = 1 ms.
(1) PL(1dB) = 174 W (= 52.4 dBm)
(2) PL(3db) = 209 W (= 53.2 dBm)
Fig 5.
Pulsed peak power capability; typical values
Fig 6.
Time in hours to 50 % cumulative failure (t50%)
due to electromigration as function of junction
temperature
001aag622
12
14
16
Gp
(dB)
10
PL(PEP) (W)
1103
102
10
(5)
(4)
(3)
(2)
(1)
001aag623
PL(PEP) (W)
1103
102
10
50
40
60
30
20
IMD3
(dBc)
70
(5)
(4)
(3)
(2)
(1)
001aag624
PL (W)
0
240
160
80
11
13
15
Gp
(dB)
9
(1)
(2)
001aag625
Tj (°C)
80
240
200
120
160
t50% × IDS2
(h
× A2)
108
107
1010
109
1011
106
相關(guān)PDF資料
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