參數(shù)資料
型號： BLF4G22LS-130
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： CERAMIC PACKAGE-2
文件頁數(shù)： 7/13頁
文件大?。?/td> 83K
代理商： BLF4G22LS-130
BLF4G22-130_4G22LS-130_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 3 July 2007
3 of 13
NXP Semiconductors
BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
5.
Thermal characteristics
6.
Characteristics
7.
Application information
7.1 Ruggedness in class-AB operation
The BLF4G22-130 and the BLF4G22LS-130 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS = 28 V; IDq = 1150 mA; PL = 130 W (CW).
Table 5:
Thermal characteristics
Symbol
Parameter
Conditions
Type
Typ
Max
Unit
Rth(j-case)
thermal resistance from
junction to case
Tcase =80 °C;
PL =33W
BLF4G22-130
0.56
0.65
K/W
BLF4G22LS-130
0.50
0.59
K/W
Table 6.
Characteristics
Tj = 25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS =0V; ID = 2.1 mA
65
-
V
VGS(th)
gate-source threshold voltage
VDS = 10 V; ID = 230 mA
2.5
3.1
3.5
V
IDSS
drain leakage current
VGS =0V; VDS = 28 V
--5
A
IDSX
drain cut-off current
VGS =VGS(th) +6 V;
VDS =10V
35
44
-
A
IGSS
gate leakage current
VGS = +15 V; VDS = 0 V
-
420
nA
gfs
forward transconductance
VDS = 10 V; ID = 12.8 A
-
11
-
S
RDS(on)
drain-source on-state
resistance
VGS =VGS(th) + 6 V;
ID = 7.7 A
-
0.07
-
Crs
feedback capacitance
VGS =0V; VDS =28V;
f = 1 MHz
-
3.4
-
pF
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA, PAR 7 dB at 0.01 % probability on CCDF,
3GPP test model 1, 1-64 DPCH; f1 = 2112.5 MHz; f2 = 2122.5 MHz; f3 = 2157.5 MHz;
f4 = 2167.5 MHz.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Gp
power gain
PL(AV) = 33 W
12.5
13.5
-
dB
RLin
input return loss
PL(AV) =33W
9
15
-
dB
ηD
drain efciency
PL(AV) =33W
24
26
-
%
IMD3
third order intermodulation
distortion
PL(AV) =33W
-
37
34 dBc
ACPR
adjacent channel power ratio
PL(AV) =33W
-
41
39 dBc
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