- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄295146 > BLF4G22LS-130 (NXP SEMICONDUCTORS) UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB PDF資料下載
參數(shù)資料
| 型號： | BLF4G22LS-130 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor - Efficiency: 26 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 33 W; Package material: SOT502B ; Power gain: 13.5 dB |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 12/13頁 |
| 文件大小： | 83K |
| 代理商： | BLF4G22LS-130 |
BLF4G22-130_4G22LS-130_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 3 July 2007
8 of 13
NXP Semiconductors
BLF4G22-130; BLF4G22LS-130
UHF power LDMOS transistor
[1]
American Technical Ceramics type 100A or capacitor of same quality.
[2]
American Technical Ceramics type 100B or capacitor of same quality.
[3]
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) (
ε
r = 3.5); thickness = 0.76 mm.
Table 9.
Component
Description
Value
Remarks
C1, C2, C11
tantalum capacitor
10
F; 35 V
C3
multilayer ceramic chip capacitor
4.7
F; 25 V
C4, C10
multilayer ceramic chip capacitor
8.2 pF
C5, C8, C14, C15
multilayer ceramic chip capacitor
1.5
F; 50 V
C6
multilayer ceramic chip capacitor
0.6 pF
C7
multilayer ceramic chip capacitor
4.7 pF
C9
multilayer ceramic chip capacitor
220 nF; 50 V
C12
electrolytic capacitor
220
F; 63 V
C13
tantalum capacitor
4.7
F; 50 V
C16
multilayer ceramic chip capacitor
7.5 pF
ATC180R
L1
stripline
Z0 = 50
(W
× L) 32.3 mm × 1.7 mm
L2
stripline
Z0 = 50
(W
× L) 2.2 mm × 1.7 mm
L3
stripline
Z0 = 24
(W
× L) 2.3 mm × 4.8 mm
L4
stripline
Z0 = 15
(W
× L) 2.4 mm × 8 mm
L5
stripline
Z0 = 9.5
(W
× L) 9.3 mm × 14 mm
L6
stripline
Z0 = 60
(W
× L) 4 mm × 1.2 mm
L7
stripline
Z0 = 60
(W
× L) 14.5 mm × 1.2 mm
L8
stripline
Z0 = 8.2
(W
× L) 9.3 mm × 16.8 mm
L9
stripline
Z0 = 5.5
(W
× L) 3 mm × 25.8 mm
L10
stripline
Z0 = 50
(W
× L) 11 mm × 1.7 mm
L11
stripline
Z0 = 50
(W
× L) 9.5 mm × 1.7 mm
L12
stripline
Z0 = 34
(W
× L) 3 mm × 3 mm
L13
stripline
Z0 = 50
(W
× L) 12.7 mm × 1.7 mm
L14
stripline
Z0 = 43
(W
× L) 13.5 mm × 2.1 mm
R1
SMD resistor
4.7
; 0.1 W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BLF6G10LS-200R | Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27.5 %; Frequency band: 869 - 894 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB |
| BLF6G10LS-200 | Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB |
| BLF872 | UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB |
| BLH2-21-35PC-1 | MIL SERIES CONNECTOR, RECEPTACLE |
| BLH2-21-39PN-1 | MIL SERIES CONNECTOR, RECEPTACLE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLF4G22LS-130,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G22S-100 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF4G22S-100,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF5 | 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Axial Lead and Cartridge Fuses - Midget |
| BLF521 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF power MOS transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。