參數(shù)資料
型號(hào)： BLF6G10LS-200
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB
中文描述： UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： ROHS COMPLIANT, CERAMIC PACKAGE-2
文件頁數(shù)： 5/11頁
文件大?。?/td> 99K
代理商： BLF6G10LS-200
BLF6G10LS-200_1
NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 18 January 2008
3 of 11
NXP Semiconductors
BLF6G10LS-200
Power LDMOS transistor
6.
Characteristics
7.
Application information
7.1 Ruggedness in class-AB operation
The BLF6G10LS-200 is capable of withstanding a load mismatch corresponding to
VSWR = 7 : 1 through all phases under the following conditions: VDS =28V;
IDq = 1400 mA; PL = 200 W; f = 894 MHz.
Table 6.
Characteristics
Tj = 25 °C unless otherwise specied.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
V(BR)DSS drain-source breakdown
voltage
VGS =0V; ID = 0.9 mA
65
-
V
VGS(th)
gate-source threshold voltage
VDS =10V;ID = 270 mA
1.4
1.9
2.4
V
VGSq
gate-source quiescent voltage
VDS = 28 V;
ID = 1620 mA
1.7
2.2
2.7
V
IDSS
drain leakage current
VGS =0V; VDS =28V
-
5
A
IDSX
drain cut-off current
VGS =VGS(th) + 3.75 V;
VDS =10V
40
45
-
A
IGSS
gate leakage current
VGS = 11 V; VDS = 0 V
-
450
nA
gfs
forward transconductance
VDS =10V; ID = 9.45 A
-
19
-
S
RDS(on)
drain-source on-state
resistance
VGS =VGS(th) + 3.75 V;
ID = 9.45 A
-
0.06
-
Crs
feedback capacitance
VGS =0V; VDS =28V;
f= 1MHz
-
3.7
-
pF
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f1 = 871.5 MHz; f2 = 876.5 MHz; f3 = 886.5 MHz; f4 = 891.5 MHz;
RF performance at VDS =28V; IDq = 1400 mA; Tcase =25 °C; unless otherwise specied; in a
class-AB production test circuit.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
PL(AV)
average output power
-
40
-
W
Gp
power gain
PL(AV) = 40 W
18.5
20.2
21.5
dB
RLin
input return loss
PL(AV) = 40 W
-
6.4
4.5
dB
ηD
drain efciency
PL(AV) = 40 W
24
27
-
%
ACPR
adjacent channel power ratio
PL(AV) = 40 W
-
41
37
dBc
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BLF6G10LS-200 /T3 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF6G10LS-200,112 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF6G10LS-200,118 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF6G10LS-200R 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF6G10LS-200R /T3 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
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