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參數(shù)資料
| 型號： | BLF6G10LS-200 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 9/11頁 |
| 文件大?。?/td> | 99K |
| 代理商： | BLF6G10LS-200 |
BLF6G10LS-200_1
NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 18 January 2008
7 of 11
NXP Semiconductors
BLF6G10LS-200
Power LDMOS transistor
[1]
American Technical Ceramics type 100B or capacitor of same quality.
[2]
TDK or capacitor of same quality.
Table 8.
All capacitors should be soldered vertically except C20.
Component
Description
Value
Remarks
C1, C2, C3, C4, C5
multilayer ceramic chip capacitor
68 pF
C6, C7, C8, C9
multilayer ceramic chip capacitor
330 nF
C10, C11
multilayer ceramic chip capacitor
4.7
F
C12, C13
Electrolytic capacitor
220
F; 63 V
C14
multilayer ceramic chip capacitor
4.7 pF; 50 V
C15
multilayer ceramic chip capacitor
9.1 pF
C18, C19
multilayer ceramic chip capacitor
10 pF
C20
multilayer ceramic chip capacitor
1.5 pF; 20 V
L1
Ferrite SMD bead
-
Ferroxcube BDS 3/3/4.6-4S2 or equivalent
Q1
BLC6G10LS-160
-
R1, R2, R3
SMD resistor
9.1
; 0.1 W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLF6G10LS-200 /T3 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF6G10LS-200,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF6G10LS-200,118 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF6G10LS-200R | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF6G10LS-200R /T3 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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