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參數(shù)資料
| 型號： | BLF6G10LS-200 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 7/11頁 |
| 文件大?。?/td> | 99K |
| 代理商： | BLF6G10LS-200 |
BLF6G10LS-200_1
NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 18 January 2008
5 of 11
NXP Semiconductors
BLF6G10LS-200
Power LDMOS transistor
7.4 2-carrier W-CDMA
VDS = 28 V; IDq = 1400 mA; f1 = 893.95 MHz;
f2 = 894.05 MHz.
VDS = 28 V; f1 = 893.95 MHz; f2 = 894.05 MHz.
(1) 1300 MHz
(2) 1350 MHz
(3) 1400 MHz
(4) 1450 MHz
(5) 1500 MHz
Fig 3.
Two-tone CW intermodulation distortion as
function of peak envelope load power; typical
values
Fig 4.
Third order intermodulation distortion as a
function of peak envelope load power; typical
values
001aah535
PL(PEP) (W)
0
350
300
100
200
50
150
250
40
60
20
0
IMD
(dBc)
80
IMD3
IMD5
IMD7
PL(PEP) (W)
0
350
300
100
200
50
150
250
001aah536
40
60
20
0
IMD3
(dBc)
80
(5)
(4)
(1)
(3)
(2)
VDS = 28 V; IDq = 1400 mA; f1 = 886.5 MHz;
f2 = 891.5 MHz; carrier spacing 5 MHz.
VDS = 28 V; IDq = 1400 mA; f1 = 886.5 MHz;
f2 = 891.5 MHz; carrier spacing 5 MHz.
Fig 5.
2-carrier W-CDMA power gain and drain
efciency as functions of average load power;
typical values
Fig 6.
2-carrier W-CDMA adjacent channel power ratio
as function of average load power; typical
values
001aah537
PL(AV) (W)
060
40
20
19
20
18
21
22
Gp
(dB)
17
20
30
10
40
50
ηD
(%)
0
Gp
ηD
001aah538
PL(AV) (W)
070
60
20
40
10
30
50
40
60
20
0
ACPR
(dBc)
80
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLF6G10LS-200 /T3 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF6G10LS-200,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF6G10LS-200,118 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF6G10LS-200R | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF6G10LS-200R /T3 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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