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參數(shù)資料
| 型號： | BLF6G10LS-200 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 27 %; Frequency band: 800-1000 GHz; Mode: W-CDMA / UMTS ; Output power: 40 W; Package material: SOT502B ; Power gain: 20 dB |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, CERAMIC PACKAGE-2 |
| 文件頁數(shù)： | 8/11頁 |
| 文件大?。?/td> | 99K |
| 代理商： | BLF6G10LS-200 |
BLF6G10LS-200_1
NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 18 January 2008
6 of 11
NXP Semiconductors
BLF6G10LS-200
Power LDMOS transistor
8.
Test information
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
ε
r = 3.5 and
thickness = 0.76 mm.
See Table 8 for list of components.
Fig 7.
Test circuit for operation at 800 MHz
001aah539
output
50
input
50
R2
R1
R3
L1
VDD
VGG
C15
C14
C20
C13
C8
C9
C4
C11
C12
C6
C7
C3
C10
C1
C2
C5
The striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with
ε
r = 3.5 and
thickness = 0.76 mm.
See Table 8 for list of components.
Fig 8.
Component layout
001aah540
NXP
OUT
800 -1000 MHz
V1.0
C6
NXP
IN
800 -1000 MHz
V1.0
C7
C3 C10
C13
C18
Q3
C19
C12
C20
C5
R3
L1
C11
C4
C9
C8
R1
C15
C14
C2
C1
R2
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BLF6G10LS-200 /T3 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF6G10LS-200,112 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF6G10LS-200,118 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF6G10LS-200R | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
| BLF6G10LS-200R /T3 | 功能描述:射頻MOSFET電源晶體管 LDMOS TNS RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray |
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