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參數(shù)資料
| 型號： | CAT28F512 |
| 英文描述： | 512K-Bit CMOS Flash Memory(512K(64K x 8位）位CMOS閃速存儲器) |
| 中文描述： | 為512k位CMOS閃存（為512k（64K的× 8位）位的CMOS閃速存儲器） |
| 文件頁數(shù)： | 5/14頁 |
| 文件大?。?/td> | 97K |
| 代理商： | CAT28F512 |
CAT28F512
5
Preliminary
Doc. No. 25042-00 2/98 F-1
SUPPLY CHARACTERISTICS
Limits
Symbol
Parameter
Min
Max.
Unit
V
CC
V
CC
Supply Voltage
4.5
5.5
V
V
PPL
V
PP
During Read Operations
0
6.5
V
V
PPH
V
PP
During Read/Erase/Program
11.4
12.6
V
5108 FHD F04
Note:
(1)
(2)
(3)
(4)
(5)
(6)
This parameter is tested initially and after a design or process change that affects the parameter.
Output floating (High-Z) is defined as the state where the external data line is no longer driven by the output buffer.
Input Rise and Fall Times (10% to 90%) < 10 ns.
Input Pulse Levels = 0.45V and 2.4V.
Input and Output Timing Reference = 0.8V and 2.0V.
Low-Z is defined as the state where the external data may be driven by the output buffer but may not be valid.
1.3V
DEVICE
UNDER
TEST
1N914
3.3K
CL = 100 pF
OUT
CL INCLUDES JIG CAPACITANCE
A.C. CHARACTERISTICS, Read Operation
V
CC
= +5V
±
10%, unless otherwise specified.
JEDEC
Symbol
Standard
Symbol
28F512-90
Min. Max.
28F512-12 28F512-15
Min. Max. Min. Max. Unit
Parameter
t
AVAV
t
RC
Read Cycle Time
90
120
150
ns
t
ELQV
t
CE
CE
Access Time
90
120
150
ns
t
AVQV
t
ACC
Address Access Time
90
120
150
ns
t
GLQV
t
OE
OE
Access Time
35
50
55
ns
t
AXQX
t
OH
Output Hold from Address
OE
/
CE
Change
0
0
0
ns
t
GLQX
t
OLZ(1)(6)
OE
to Output in Low-Z
0
0
0
ns
t
ELQX
t
LZ(1)(6)
CE
to Output in Low-Z
0
0
ns
t
GHQZ
t
DF(1)(2)
OE
High to Output High-Z
20
30
35
ns
t
EHQZ
t
DF(1)(2)
CE
High to Output High-Z
30
40
45
ns
t
WHGL(1)
-
Write Recovery Time Before Read
6
6
6
μ
s
INPUT PULSE LEVELS
REFERENCE POINTS
2.0 V
0.8 V
2.4 V
0.45 V
5096 FHD F03
Figure 1. A.C. Testing Input/Output Waveform
(3)(4)(5)
Figure 2. A.C. Testing Load Circuit (example)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CAT28F512G12 | 功能描述:閃存 64 X 8 512K 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| CAT28F512G-12 | 制造商:ON Semiconductor 功能描述:Flash Memory IC |
| CAT28F512G-12T | 功能描述:閃存 512K-Bit CMOS 閃存 Memory RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| CAT28F512G90 | 功能描述:閃存 64 X 8 512K 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| CAT28F512G-90 | 制造商:ON Semiconductor 功能描述:IC FLASH 512KBIT 90NS LCC-32 |
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