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參數(shù)資料
| 型號： | CAT28F512 |
| 英文描述： | 512K-Bit CMOS Flash Memory(512K(64K x 8位）位CMOS閃速存儲器) |
| 中文描述： | 為512k位CMOS閃存（為512k（64K的× 8位）位的CMOS閃速存儲器） |
| 文件頁數(shù)： | 6/14頁 |
| 文件大小： | 97K |
| 代理商： | CAT28F512 |
CAT28F512
6
Preliminary
Doc. No. 25042-00 2/98 F-1
A.C. CHARACTERISTICS, Program/Erase Operation
V
CC
= +5V
±
10%, unless otherwise specified.
JEDEC
Symbol
Standard
Symbol
28F512-90
Min. Max. Min. Max. Min. Max.
28F512-12
28F512-15
Parameter
Unit
t
AVAV
t
WC
Write Cycle Time
90
120
150
ns
t
AVWL
t
AS
Address Setup Time
0
0
0
ns
t
WLAX
t
AH
Address Hold Time
40
40
40
ns
t
DVWH
t
DS
Data Setup Time
40
40
40
ns
t
WHDX
t
DH
Data Hold Time
10
10
10
ns
t
ELWL
t
CS
CE
Setup Time
0
0
0
ns
t
WHEH
t
CH
CE
Hold Time
0
0
0
ns
t
WLWH
t
WP
WE
Pulse Width
40
40
40
ns
t
WHWL
t
WPH
WE
High Pulse Width
20
20
20
ns
t
WHWH1(2)
-
Program Pulse Width
10
10
10
μ
s
t
WHWH2(2)
-
Erase Pulse Width
9.5
9.5
9.5
ms
t
WHGL
-
Write Recovery Time Before Read
6
6
6
μ
s
μ
s
t
GHWL
-
Read Recovery Time Before Write
0
0
0
t
VPEL
-
V
PP
Setup Time to
CE
100
100
100
ns
ERASE AND PROGRAMMING PERFORMANCE
(1)
28F512-90
Min.
Typ.
28F512-12
Min.
Typ.
28F512-15
Min.
Typ.
Parameter
Max.
Max.
Max.
Unit
Chip Erase Time
(3)(5)
0.5
10
0.5
10
0.5
10
sec
Chip Program Time
(3)(4)
1
6
1
6
1
6
sec
Note:
(1)
Please refer to Supply characteristics for the value of V
PPH
and V
PPL
. The V
PP
supply can be either hardwired or switched. If V
PP
is switched,
V
PPL
can be ground, less than V
CC
+ 2.0V or a no connect with a resistor tied to ground.
Program and Erase operations are controlled by internal stop timers.
‘Typicals’ are not guaranteed, but based on characterization data. Data taken at 25
°
C, 12.0V V
PP
.
Minimum byte programming time (excluding system overhead) is 16
μ
s (10
μ
s program + 6
μ
s write recovery), while maximum is 400
μ
s/
byte (16
μ
s x 25 loops). Max chip programming time is specified lower than the worst case allowed by the programming algorithm since
most bytes program significantly faster than the worst case byte.
Excludes 00H Programming prior to Erasure.
(2)
(3)
(4)
(5)
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CAT28F512G12 | 功能描述:閃存 64 X 8 512K 120ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| CAT28F512G-12 | 制造商:ON Semiconductor 功能描述:Flash Memory IC |
| CAT28F512G-12T | 功能描述:閃存 512K-Bit CMOS 閃存 Memory RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| CAT28F512G90 | 功能描述:閃存 64 X 8 512K 90ns RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲類型:Flash 存儲容量:2 MB 結(jié)構(gòu):256 K x 8 定時類型: 接口類型:SPI 訪問時間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel |
| CAT28F512G-90 | 制造商:ON Semiconductor 功能描述:IC FLASH 512KBIT 90NS LCC-32 |
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