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參數(shù)資料
| 型號： | CY14E102N-BA20XI |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 128K X 16 NON-VOLATILE SRAM, 20 ns, PBGA48 |
| 封裝： | 6 X 10 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, FBGA-48 |
| 文件頁數(shù)： | 18/21頁 |
| 文件大?。?/td> | 628K |
| 代理商： | CY14E102N-BA20XI |
ADVANCE
CY14E102L, CY14E102N
Document Number: 001-45755 Rev. *A
Page 6 of 21
Preventing AutoStore
The AutoStore function is disabled by initiating an AutoStore
disable sequence. A sequence of read operations is performed
in a manner similar to the software STORE initiation. To initiate
the AutoStore disable sequence, the following sequence of CE
controlled read operations must be performed:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x8B45 AutoStore Disable
The AutoStore is re-enabled by initiating an AutoStore enable
sequence. A sequence of read operations is performed in a
manner similar to the software RECALL initiation. To initiate the
AutoStore enable sequence, the following sequence of CE
controlled read operations must be performed:
1. Read address 0x4E38 Valid READ
2. Read address 0xB1C7 Valid READ
3. Read address 0x83E0 Valid READ
4. Read address 0x7C1F Valid READ
5. Read address 0x703F Valid READ
6. Read address 0x4B46 AutoStore Enable
If the AutoStore function is disabled or re-enabled a manual
STORE operation (hardware or software) must be issued to save
the AutoStore state through subsequent power down cycles. The
part comes from the factory with AutoStore enabled.
Data Protection
The CY14E102L/CY14E102N protects data from corruption
during low voltage conditions by inhibiting all externally initiated
STORE and write operations. The low voltage condition is
detected when VCC < VSWITCH. If the CY14E102L/CY14E102N
is in a write mode (both CE and WE LOW) at power up, after a
RECALL or STORE, the write is inhibited until a negative
transition on CE or WE is detected. This protects against
inadvertent writes during power up or brown out conditions.
Noise Considerations
Refer CY Application Note AN1064.
L
H
L
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x8FC0
Read SRAM
Nonvolatile Store
Output Data
Output High Z
Active ICC2
L
H
L
0x4E38
0xB1C7
0x83E0
0x7C1F
0x703F
0x4C63
Read SRAM
Nonvolatile
Recall
Output Data
Output High Z
Active[5,6,7]
Table 1. Mode Selection (continued)
CE
WE
OE
A15 - A0
Mode
IO
Power
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY14E102N-ZSP45XIT | 128K X 16 NON-VOLATILE SRAM, 45 ns, PDSO54 |
| CY21DF-FREQ2-OUT23 | VCXO, CLOCK, 65 MHz - 160 MHz, CMOS/TTL OUTPUT |
| CY23CH-FREQ-OUT23 | VCXO, CLOCK, 1.25 MHz - 65 MHz, CMOS/TTL OUTPUT |
| CY22DF-FREQ2-OUT23 | VCXO, CLOCK, 65 MHz - 160 MHz, CMOS/TTL OUTPUT |
| CY12FF-FREQ1-OUT23 | VCXO, CLOCK, 1.25 MHz - 65 MHz, CMOS/TTL OUTPUT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY14E102N-ZS45XCES | 制造商:Cypress Semiconductor 功能描述:NVSRAM 2MB 128KX16 44 PIN TSOPII COMMERCIAL TEMP - Trays |
| CY14E108L-BA45XCES | 制造商:Cypress Semiconductor 功能描述:NVSRAM 8MB 1024KX8 FBGA COMMERCIAL TEMP - Trays |
| CY14E108N-BA45XCES | 制造商:Cypress Semiconductor 功能描述:NVSRAM 8MB 512KX16 5 VOLT FBGA COMMERCIAL TEMP - Trays |
| CY14E256LA-SZ25XI | 功能描述:NVRAM 32Kb x8 4.5-5.5V NVSRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| CY14E256LA-SZ25XIT | 功能描述:NVRAM 32Kb x8 4.5-5.5V NVSRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
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