參數(shù)資料
型號: CY14E102N-BA20XI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: SRAM
英文描述: 128K X 16 NON-VOLATILE SRAM, 20 ns, PBGA48
封裝: 6 X 10 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, FBGA-48
文件頁數(shù): 20/21頁
文件大?。?/td> 628K
代理商: CY14E102N-BA20XI
ADVANCE
CY14E102L, CY14E102N
Document Number: 001-45755 Rev. *A
Page 8 of 21
AC Test Conditions
Input Pulse Levels ....................................................0V to 3V
Input Rise and Fall Times (10% - 90%) ........................ <5 ns
Input and Output Timing Reference Levels .................... 1.5V
Capacitance
The following table lists the capacitance parameters.[11]
Parameter
Description
Test Conditions
Max
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = 0 to 3.0V
7pF
COUT
Output Capacitance
7
pF
Thermal Resistance
The following table lists the thermal resistance parameters. [11]
Parameter
Description
Test Conditions
48-FBGA 44-TSOP II 54-TSOP II
Unit
Θ
JA
Thermal Resistance
(Junction to Ambient)
Test conditions follow standard test methods and
procedures for measuring thermal impedance, in
accordance with EIA/JESD51.
28.82
31.11
30.73
°C/W
Θ
JC
Thermal Resistance
(Junction to Case)
7.84
5.56
6.08
°C/W
AC Test Loads
5.0V
OUTPUT
5 pF
R1
R2
512
Ω
5.0V
OUTPUT
30 pF
R1
R2
512
Ω
for tri-state specs
963
Ω
963
Ω
Note
11. These parameters are guaranteed but not tested.
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