參數資料
型號: CY14E102N-BA20XI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: SRAM
英文描述: 128K X 16 NON-VOLATILE SRAM, 20 ns, PBGA48
封裝: 6 X 10 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, FBGA-48
文件頁數: 19/21頁
文件大?。?/td> 628K
代理商: CY14E102N-BA20XI
ADVANCE
CY14E102L, CY14E102N
Document Number: 001-45755 Rev. *A
Page 7 of 21
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ................................. –65
°C to +150°C
Ambient Temperature with
Power Applied ............................................ –55
°C to +150°C
Supply Voltage on VCC Relative to GND ..........–0.5V to 7.0V
Voltage Applied to Outputs
in High-Z State....................................... –0.5V to VCC + 0.5V
Input Voltage.............................................–0.5V to Vcc+0.5V
Transient Voltage (<20 ns) on
Any Pin to Ground Potential .................. –2.0V to VCC + 2.0V
Package Power Dissipation
Capability (TA = 25°C) ................................................... 1.0W
Surface Mount Pb Soldering
Temperature (3 Seconds) .......................................... +260
°C
Output Short Circuit Current [8].................................... 15 mA
Static Discharge Voltage.......................................... > 2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current ................................................... > 200 mA
Operating Range
Range
Ambient Temperature
VCC
Commercial
0
°C to +70°C
4.5V to 5.5V
Industrial
–40
°C to +85°C
4.5V to 5.5V
DC Electrical Characteristics
Over the Operating Range (VCC = 4.5V to 5.5V)
Parameter
Description
Test Conditions
Min
Max
Unit
ICC1
Average VCC Current
tRC = 15 ns
tRC = 20 ns
tRC = 25 ns
tRC = 45 ns
Dependent on output loading and cycle
rate.Values obtained without output loads.
IOUT = 0 mA
Commercial
70
65
50
mA
Industrial
75
70
52
mA
ICC2
Average VCC Current
during STORE
All Inputs Don’t Care, VCC = Max
Average current for duration tSTORE
6mA
ICC3
Average VCC Current at
tRC= 200 ns, 5V, 25°C
typical
WE > (VCC – 0.2). All other I/P cycling.
Dependent on output loading and cycle rate. Values obtained
without output loads.
35
mA
ICC4
Average VCAP Current
during AutoStore Cycle
All Inputs Don’t Care, VCC = Max
Average current for duration tSTORE
6mA
ISB
VCC Standby Current
CE > (VCC – 0.2). All others VIN < 0.2V or > (VCC – 0.2V).
Standby current level after nonvolatile cycle is complete.
Inputs are static. f = 0 MHz.
3mA
IIX
Input Leakage Current
(except HSB)
VCC = Max, VSS < VIN < VCC
–1
+1
μA
Input Leakage Current
(For HSB)
VCC = Max, VSS < VIN < VCC
–100
+1
μA
IOZ
Off-State Output
Leakage Current
VCC = Max, VSS < VIN < VCC, CE or OE > VIH
–1
+1
μA
VIH
Input HIGH Voltage
2.0
VCC + 0.5
V
VIL
Input LOW Voltage
Vss – 0.5
0.8
V
VOH
Output HIGH Voltage
IOUT = –2 mA
2.4
V
VOL
Output LOW Voltage
IOUT = 4 mA
0.4
V
VCAP
Storage Capacitor
Between VCAP pin and VSS, 5V Rated
61
82
μF
Notes
8. Outputs shorted for no more than one second. No more than one output shorted at a time.
9. Typical conditions for the active current shown on the front page of the data sheet are average values at 25°C (room temperature), and VCC = 5V. Not 100% tested.
10. The HSB pin has IOUT=-10 uA for VOH of 2.4V.This parameter is characterized but not tested.
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