參數(shù)資料
型號(hào): CY14E102N-BA20XI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: SRAM
英文描述: 128K X 16 NON-VOLATILE SRAM, 20 ns, PBGA48
封裝: 6 X 10 MM, 1.20 MM HEIGHT, ROHS COMPLIANT, FBGA-48
文件頁數(shù): 5/21頁
文件大?。?/td> 628K
代理商: CY14E102N-BA20XI
ADVANCE
CY14E102L, CY14E102N
Document Number: 001-45755 Rev. *A
Page 13 of 21
Figure 9. AutoStore or Power Up RECALL[26]
Figure 10. CE Controlled Software STORE/RECALL Cycle[19]
Switching Waveforms (continued)
VCC
VSWITCH
tSTORE
tHRECALL
AutoStore
POWER-UP RECALL
Read & Write Inhibited
STORE occurs only
if a SRAM write
has happened
No STORE occurs
without atleast one
SRAM write
tVCCRISE
Note
26. Read and Write cycles are ignored during STORE, RECALL, and while VCC is below VSWITCH.
相關(guān)PDF資料
PDF描述
CY14E102N-ZSP45XIT 128K X 16 NON-VOLATILE SRAM, 45 ns, PDSO54
CY21DF-FREQ2-OUT23 VCXO, CLOCK, 65 MHz - 160 MHz, CMOS/TTL OUTPUT
CY23CH-FREQ-OUT23 VCXO, CLOCK, 1.25 MHz - 65 MHz, CMOS/TTL OUTPUT
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