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參數(shù)資料
| 型號(hào)： | DSM2150F5V |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | 數(shù)字信號(hào)處理 |
| 英文描述： | DSM (Digital Signal Processor System Memory) for Analog Devices DSPs (3.3V Supply) |
| 中文描述： | 帝斯曼（數(shù)字信號(hào)處理器系統(tǒng)內(nèi)存）的ADI公司的DSP（3.3V電源） |
| 文件頁(yè)數(shù)： | 15/73頁(yè) |
| 文件大?。?/td> | 1067K |
| 代理商： | DSM2150F5V |
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DSM2150F5V
Table 5. Instruction Sequences for 8-bit Operation (Notes 1,2,3,4)
Note: 1. All values are in hexadecimal, X =
“
Don
’
t care
”
2. A desired internal Flash memory sector select signal (FS0 - FS7 or CSBOOT0 - CSBOOT3) must be active for each WRITE or
READ cycle. Only one of these sector select signals will be active at any given time depending on the address presented by the
DSP and the memory mapping defined in PSDsoft Express. FS0 - FS7 and CSBOOT0-CSBOOT3 are active high logic internally.
3. Only address Bits A11-A0 are used during Flash memory instruction sequence decoding bus cycles. The individual sector select
signal (FS0 - FS7 or CSBOOT0-CSBOOT3) which is active during the instruction sequences determines the complete address.
4. For WRITE operations, addresses are latched on the falling edge of Write Strobe (WR, CNTL0), Data is latched on the rising edge
of Write Strobe (WR, CNTL0)
5. No Unlock or Instruction cycles are required when the device is in the Read Array Mode. Operation is like reading a ROM device.
Instruction
Sequence
Cycle 1
Cycle 2
Cycle 3
Cycle 4
Cycle 5
Cycle 6
Cycle 7
Read Memory
Contents
5
Read byte
from any
valid Flash
memory addr
Read Flash
Identifier (Main
Flash only)
6,7
Write AAh to
XX555h
Write 55h
to XXAAAh
Write 90h
to XX555h
Read identifier
at addr
XXX01h
Read Memory
Sector Protection
Status
6,7,8
Write AAh to
XX555h
Write 55h
to XXAAAh
Write 90h
to XX555h
Read value at
addr XXX02h
Program a Flash
Byte
Write AAh to
XX555h
Write 55h
to XXAAAh
Write A0h
to XX555h
Write
(program) data
to addr
Flash Bulk Erase
9
Write AAh to
XX555h
Write 55h
to XXAAAh
Write 80h
to XX555h
Write AAh to
XX555h
Write 55h
to XXAAAh
Write 10h
to XX555h
Flash Sector
Erase
10
Write AAh to
XX555h
Write 55h
to XXAAAh
Write 80h
to XX555h
Write AAh to
XX555h
Write 55h
to XXAAAh
Write 30h
to another
Sector
Write 30h
to another
Sector
Suspend Sector
Erase
11
Write B0h to
addr in FS0-7
or
CSBOOT0-3
Resume Sector
Erase
12
Write 30h to
addr in FS0-7
or
CSBOOT0-3
Reset Flash
6
Write F0h to
addr in FS0-7
or
CSBOOT0-3
Unlock Bypass
Write AAh to
XX555h
Write 55h
to XXAAAh
Write 20h
to XX555h
Unlock Bypass
Program
13
Write A0h to
addr in FS0-7
or
CSBOOT0-3
Write
(program)
data to
addr
Unlock Bypass
Reset
14
Write 90h to
addr in FS0-7
or
CSBOOT0-3
Write 00h
to addr in
FS0-7 or
CSBOOT0-
3
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PDF描述 |
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| DSM2150F5V-12T6 | DSM (Digital Signal Processor System Memory) for Analog Devices DSPs (3.3V Supply) |
| DSM2180F3 | DSM (Digital Signal Processor System Memory) For Analog Devices ADSP-218X Family (5V Supply) |
| DSM2180F315K6 | DSM (Digital Signal Processor System Memory) For Analog Devices ADSP-218X Family (5V Supply) |
| DSM2180F315T6 | DSM (Digital Signal Processor System Memory) For Analog Devices ADSP-218X Family (5V Supply) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| DSM2150F5V-12T6 | 功能描述:SPLD - 簡(jiǎn)單可編程邏輯器件 3.3V 4M 120ns RoHS:否 制造商:Texas Instruments 邏輯系列:TICPAL22V10Z 大電池?cái)?shù)量:10 最大工作頻率:66 MHz 延遲時(shí)間:25 ns 工作電源電壓:4.75 V to 5.25 V 電源電流:100 uA 最大工作溫度:+ 75 C 最小工作溫度:0 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:DIP-24 |
| DSM2150F5V-12T6T | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM |
| DSM2180F3 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:DSM (Digital Signal Processor System Memory) for analog devices ADSP-218X family (5 V supply) |
| DSM2180F3_08 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:DSM (Digital Signal Processor System Memory) for analog devices ADSP-218X family (5 V supply) |
| DSM2180F315K6 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:DSM (Digital Signal Processor System Memory) For Analog Devices ADSP-218X Family (3.3V Supply) |
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