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參數(shù)資料
型號: DSP56301PW80
廠商: Freescale Semiconductor
文件頁數(shù): 71/124頁
文件大小: 0K
描述: IC DSP 24BIT 80MHZ 208-LQFP
標準包裝: 36
系列: DSP563xx
類型: 定點
接口: 主機接口,SSI,SCI
時鐘速率: 80MHz
非易失內(nèi)存: ROM(9 kB)
芯片上RAM: 24kB
電壓 - 輸入/輸出: 3.30V
電壓 - 核心: 3.30V
工作溫度: -40°C ~ 100°C
安裝類型: 表面貼裝
封裝/外殼: 208-LQFP
供應商設備封裝: 208-LQFP
包裝: 托盤
DSP56301 Technical Data, Rev. 10
2-24
Freescale Semiconductor
Specifications
187
RAS assertion to data not valid (write)
tDHR
7.75
× TC 4.0
92.9
73.5
ns
188
WR assertion to CAS assertion
tWCS
6.5
× TC 4.3
77.0
60.7
ns
189
CAS assertion to RAS assertion (refresh)
tCSR
1.5
× TC 4.0
14.8
11.0
ns
190
RAS deassertion to CAS assertion (refresh)
tRPC
2.75
× TC 4.0
30.4
23.5
ns
191
RD assertion to RAS deassertion
tROH
11.5
× TC 4.0
139.8
111.0
ns
192
RD assertion to data valid
tGA
80 MHz:
10
× TC 6.5
100 MHz:
10
× TC 7.0
118.5
93.0
ns
193
RD deassertion to data not valid3
tGZ
0.0
0.0
ns
194
WR assertion to data active
0.75
× TC – 1.5
9.1
6.0
ns
195
WR deassertion to data high impedance
0.25
× TC
—3.1
—2.5
ns
Notes:
1.
The number of wait states for an out-of-page access is specified in the DCR.
2.
The refresh period is specified in the DCR.
3.
RD deassertion always occurs after CAS deassertion; therefore, the restricted timing is tOFF and not tGZ.
4.
Either tRCH or tRRH must be satisfied for read cycles.
Table 2-14.
DRAM Out-of-Page and Refresh Timings, Fifteen Wait States1, 2
No.
Characteristics3
Symbol
Expression
80 MHz
100 MHz
Unit
Min
Max
Min
Max
157
Random read or write cycle time
tRC
16
× TC
200.0
160.0
ns
158
RAS assertion to data valid (read)
tRAC
80 MHz:
8.25
× TC 6.5
100 MHz:
8.25
× TC 5.7
96.6
76.8
ns
159
CAS assertion to data valid (read)
tCAC
80 MHz:
4.75
× TC 6.5
100 MHz:
4.75
× TC 5.7
52.9
41.8
ns
160
Column address valid to data valid (read)
tAA
80 MHz:
5.5
× TC 6.5
100 MHz:
5.5
× TC 5.7
62.3
49.3
ns
161
CAS deassertion to data not valid (read hold time)
tOFF
0.0
0.0
ns
162
RAS deassertion to RAS assertion
tRP
6.25
× TC 4.0
74.1
58.5
ns
163
RAS assertion pulse width
tRAS
9.75
× TC 4.0
117.9
93.5
ns
164
CAS assertion to RAS deassertion
tRSH
6.25
× TC 4.0
74.1
58.5
ns
165
RAS assertion to CAS deassertion
tCSH
8.25
× TC 4.0
99.1
78.5
ns
166
CAS assertion pulse width
tCAS
4.75
× TC 4.0
55.4
43.5
ns
167
RAS assertion to CAS assertion
tRCD
3.5
× TC ± 2
41.8
45.8
33.0
37.0
ns
168
RAS assertion to column address valid
tRAD
2.75
× TC ± 2.0
32.4
36.4
25.5
29.5
ns
169
CAS deassertion to RAS assertion
tCRP
7.75
× TC 4.0
92.9
73.5
ns
Table 2-13.
DRAM Out-of-Page and Refresh Timings, Eleven Wait States1, 2 (Continued)
No.
Characteristics3
Symbol
Expression
80 MHz
100 MHz
Unit
Min
Max
Min
Max
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