
External Memory Expansion Port (Port A)
DSP56362 Technical Data, Rev. 4
Freescale Semiconductor
3-15
104 Address and AA valid to input data valid
tAA, tAC
100 MHz:
(WS + 0.75)
× T
C 7.0
[WS
≥ 1]
—
10.5
7.6
ns
105 RD assertion to input data valid
tOE
100 MHz:
(WS + 0.25)
× T
C 7.0
[WS
≥ 1]
—5.5
—3.4
ns
106 RD deassertion to data not valid (data hold
time)
tOHZ
0.0
—
0.0
—
ns
107 Address valid to WR deassert
ion3tAW
(WS + 0.75)
× T
C 4.0
[WS
≥ 1]
13.5
—
10.6
—
ns
108 Data valid to WR deassertion (data setup
time)
tDS (tDW)
100 MHz:
(WS
0.25) × T
C 3.0
[WS
≥ 1]
4.5
—
3.2
—
ns
109 Data hold time from WR deassertion
tDH
100 MHz:
0.25
× T
C 2.0
[1
≤ WS ≤ 3]
0.5
—
0.1
—
ns
1.25
× T
C 2.0
[4
≤ WS ≤ 7]
10.5
—
8.4
—
2.25
× T
C 2.0
[WS
≥ 8]
20.5
—
16.7
—
110 WR assertion to data active4
0.75
× T
C 3.7
[WS = 1]
——
2.5
—
ns
0.25
× T
C 3.7
[2
≤ WS ≤ 3]
——
0.0
—
0.25 × T
C 3.7
[WS
≥ 4]
——
0.0
—
111 WR deassertion to data high impedance
40.25
× T
C + 0.2
[1
≤ WS ≤ 3]
——
—
2.3
ns
1.25
× T
C + 0.2
[4
≤ WS ≤ 7]
——
—
10.6
2.25
× T
C + 0.2
[WS
≥ 8]
——
—
18.9
Table 3-8 SRAM Read and Write Accesses 100 and 120 MHz1 (continued)
No.
Characteristics
Symbol
Expression2
100 MHz
120 MHz
Unit
Min
Max
Min
Max