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參數(shù)資料
型號: DSPB56362AG120
廠商: Freescale Semiconductor
文件頁數(shù): 94/152頁
文件大?。?/td> 0K
描述: IC DSP 24BIT AUD 120MHZ 144-LQFP
標(biāo)準(zhǔn)包裝: 60
系列: DSP56K/Symphony
類型: 音頻處理器
接口: 主機(jī)接口,I²C,SAI,SPI
時鐘速率: 120MHz
非易失內(nèi)存: ROM(126 kB)
芯片上RAM: 42kB
電壓 - 輸入/輸出: 3.30V
電壓 - 核心: 3.30V
工作溫度: -40°C ~ 85°C
安裝類型: 表面貼裝
封裝/外殼: 144-LQFP
供應(yīng)商設(shè)備封裝: 144-LQFP(20x20)
包裝: 托盤
External Memory Expansion Port (Port A)
DSP56362 Technical Data, Rev. 4
3-20
Freescale Semiconductor
137 CAS assertion pulse width
tCAS
0.75
× T
C 4.0
33.5
21.0
ns
138 Last CAS deassertion to RAS deassertion5
BRW[1:0] = 00
BRW[1:0] = 01
BRW[1:0] = 10
BRW[1:0] = 11
tCRP
1.75
× T
C 6.0
3.25
× T
C 6.0
4.25
× T
C 6.0
6.25
× T
C – 6.0
81.5
156.5
206.5
306.5
52.3
102.2
135.5
202.1
ns
139 CAS deassertion pulse width
tCP
0.5
× T
C 4.0
21.0
12.7
ns
140 Column address valid to CAS assertion
tASC
0.5
× T
C 4.0
21.0
12.7
ns
141 CAS assertion to column address not valid
tCAH
0.75
× T
C 4.0
33.5
21.0
ns
142 Last column address valid to RAS deassertion
tRAL
2
× T
C 4.0
96.0
ns
143 WR deassertion to CAS assertion
tRCS
0.75
× T
C 3.8
33.7
21.2
ns
144 CAS deassertion to WR assertion
tRCH
0.25
× T
C 3.7
8.8
4.6
ns
145 CAS assertion to WR deassertion
tWCH
0.5
× T
C 4.2
20.8
12.5
ns
146 WR assertion pulse widt
h
tWP
1.5
× T
C 4.5
70.5
45.5
ns
147 Last WR assertion to RAS deassertion
tRWL
1.75
× T
C 4.3
83.2
54.0
ns
148 WR assertion to CAS deassertion
tCWL
1.75
× T
C 4.3
83.2
54.0
ns
149 Data valid to CAS assertion (Write)
tDS
0.25
× T
C 4.0
8.5
4.3
ns
150 CAS assertion to data not valid (write)
tDH
0.75
× T
C 4.0
33.5
21.0
ns
151 WR assertion to CAS assertion
tWCS
TC 4.3
45.7
29.0
ns
152 Last RD assertion to RAS deassertion
tROH
1.5
× T
C 4.0
71.0
46.0
ns
153 RD assertion to data valid
tGA
TC 7.5
42.5
25.8
ns
154 RD deassertion to data not valid 6
tGZ
0.0
0.0
ns
155 WR assertion to data active
0.75
× T
C 0.3
37.2
24.7
ns
156 WR deassertion to data high impedance
0.25
× T
C
12.5
8.3
ns
1 The number of wait states for Page mode access is specified in the DCR.
2 The refresh period is specified in the DCR.
3 All the timings are calculated for the worst case. Some of the timings are better for specific cases (e.g., t
PC equals 2 × TC for
read-after-read or write-after-write sequences).
4 Reduced DSP clock speed allows use of Page Mode DRAM with one Wait state. See
5 BRW[1:0] (DRAM control register bits) defines the number of wait states that should be inserted in each DRAM out-of-page
access.
6 RD deassertion will always occur after CAS deassertion; therefore, the restricted timing is t
OFF and not tGZ.
Table 3-9 DRAM Page Mode Timings, One Wait State (Low-Power Applications)1, 2, 3 (continued)
No.
Characteristics
Symbol
Expression
20 MHz4
30 MHz
4
Unit
Min
Max
Min
Max
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