TA = 25°C, unless otherwise no" />
參數(shù)資料
型號: EVAL-ADF4150HVEB1Z
廠商: Analog Devices Inc
文件頁數(shù): 25/28頁
文件大?。?/td> 0K
描述: EVAL BOARD FOR ADF4150HV
標(biāo)準(zhǔn)包裝: 1
類型: 整數(shù) N 合成器(RF)
頻率: 3GHz
適用于相關(guān)產(chǎn)品: ADF4150HV
已供物品:
ADF4150HV
Rev. 0 | Page 6 of 28
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
Rating
AVDD to GND1
0.3 V to +3.9 V
AVDD to DVDD
0.3 V to +0.3 V
VP to GND1
0.3 V to +33 V
Digital I/O Voltage to GND1
0.3 V to AVDD + 0.3 V
Analog I/O Voltage to GND1
0.3 V to DVDD + 0.3 V
REFIN to GND1
0.3 V to AVDD + 0.3 V
Operating Temperature Range
40°C to +85°C
Storage Temperature Range
65°C to +125°C
Maximum Junction Temperature
150°C
Reflow Soldering
Peak Temperature
260°C
Time at Peak Temperature
40 sec
1 GND = CPGND = SDGND = 0 V.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
TRANSISTOR COUNT
The transistor count for the ADF4150HV is 23,380 (CMOS)
and 809 (bipolar).
THERMAL RESISTANCE
Thermal impedance (θJA) is specified for a device with the
exposed pad soldered to GND.
Table 4. Thermal Resistance
Package Type
θJA
Unit
32-Lead LFCSP (CP-32-11)
27.3
°C/W
ESD CAUTION
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