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參數(shù)資料
| 型號(hào)： | GE28F640W30B70 |
| 英文描述： | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| 中文描述： | 的EEPROM | FLASH動(dòng)畫(huà)| 4MX16 |的CMOS | BGA封裝| 56PIN |塑料 |
| 文件頁(yè)數(shù)： | 33/91頁(yè) |
| 文件大?。?/td> | 994K |
| 代理商： | GE28F640W30B70 |
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1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O
Datasheet
33
6.2
Block Erase
The 2-cycle block erase command sequence, consisting of Erase Setup (20h) and Erase Confirm
(D0h), initiates one block erase at the addressed block. Only one partition can be in an erase mode
at a time; other partitions must be in a read mode. The Erase Confirm command internally latches
the address of the block to be erased. Erase forces all bits within the block to 1. SR[7] is cleared
while the erase executes.
Figure 8. Erase Suspend / Resume Flowchart
Erase
Completed
Write FFh
Erased Partition
Read Array
Data
0
0
No
Read
1
Program
Program
Loop
Read Array
Data
1
Yes
Start
Write B0h
Any Address
Read Status
Register
SR[7] =
SR[6] =
Write D0h
Any Address
Erase Resumed
Read or
Program
Done
Write
Write
Standby
Standby
Write
Erase
Suspend
Read Array
or Program
Erase
Resume
Data = B0h
Addr = Any address
Data = FFh or 40h
Addr = Any device address (except
block being erased)
Check SR[7]
1 = WSM ready
0 = WSM busy
Check SR[6]
1 = Erase suspended
0 = Erase completed
Data = D0h
Addr = Any address
OpBus
Comments
Read
Read SRD
Toggle CE# or OE# to update SRD
Addr = Any address in same partition
Read or
Write
Read array or program data from/to
block other than the one being erased
ERASE SUSPEND / RESUME PROCEDURE
Write 70h
Same Partition
Write
Read
Status
Data = 70h
Addr = Any address in same partition
Write 70h
Same Partition
If the suspended partition was placed in
Read Array mode or a Program Loop:
Write
Read
Status
Return partition to status mode:
Data = 70h
Addr = Address within same partition
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| GE28F640W30B85 | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GE28F640W30T70 | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GE28F640W30T85 | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GF4435 | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 8A I(D) | SO |
| GF4450 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 7.5A I(D) | SO |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GE28F640W30B85 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GE28F640W30T70 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GE28F640W30T85 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| GE28F800B3BA90 | 制造商:Intel 功能描述:NOR Flash, 512K x 16, 45 Pin, Plastic, BGA |
| GE28F800B3TA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
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