參數(shù)資料
型號: GE28F640W30B70
英文描述: EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC
中文描述: 的EEPROM | FLASH動畫| 4MX16 |的CMOS | BGA封裝| 56PIN |塑料
文件頁數(shù): 69/91頁
文件大?。?/td> 994K
代理商: GE28F640W30B70
1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O
Datasheet
69
11.2
AC Write Characteristics
NOTES:
1. Write timing characteristics during erase suspend are the same as during write-only operations.
2. A write operation can be terminated with either CE# or WE#.
3. Sampled, not 100% tested.
4. Write pulse width low (t
WLWH
or t
ELEH
) is defined from CE# or WE# low (whichever occurs last) to CE# or
WE# high (whichever occurs first). Hence, t
WLWH
= t
ELEH
= t
WLEH
= t
ELWH
.
5. Write pulse width high (t
WHWL
or t
EHEL
) is defined from CE# or WE# high (whichever is first) to CE# or WE#
low (whichever is last). Hence, t
WHWL
= t
EHEL
= t
WHEL
= t
EHWL
.
Table 22. AC Write Characteristics
#
Sym
Parameter
1,2
Notes
32-Mbit
64-Mbit
128-Mbit
Unit
-70
-85/-90
Min
Max
Min
Max
W1
t
PHWL
(t
PHEL
)
t
ELWL
(t
WLEL
)
t
WLWH
(t
ELEH
)
t
DVWH
(t
DVEH
)
t
AVWH
(t
AVEH
)
t
WHEH
(t
EHWH
)
t
WHDX
(t
EHDX
)
t
WHAX
(t
EHAX
)
t
WHWL
(t
EHEL
)
t
VPWH
(t
VPEH
)
t
QVVL
t
QVBL
t
BHWH
(t
BHEH
)
t
WHGL
(t
EHGL
)
RST# High Recovery to WE#
(CE#) Low
3
150
150
ns
W2
CE# (WE#) Setup to WE# (CE#)
Low
0
0
ns
W3
WE# (CE#) Write Pulse Width
Low
4
45
60
ns
W4
Data Setup to WE# (CE#) High
45
60
ns
W5
Address Setup to WE# (CE#)
High
45
60
ns
W6
CE# (WE#) Hold from WE# (CE#)
High
0
0
ns
W7
Data Hold from WE# (CE#) High
0
0
ns
W8
Address Hold from WE# (CE#)
High
0
0
ns
W9
WE# (CE#) Pulse Width High
5,6,7
25
25
ns
W10
VPP Setup to WE# (CE#) High
3
200
200
ns
W11
VPP Hold from Valid SRD
3,8
0
0
ns
W12
WP# Hold from Valid SRD
3,8
0
0
ns
W13
WP# Setup to WE# (CE#) High
3
200
200
ns
W14
Write Recovery before Read
0
0
ns
W16
t
WHQV
WE# High to Valid Data
3,6,10
t
+ 40
t
+ 50
ns
W18
t
WHAV
t
WHCV
t
WHVH
WE# High to Address Valid
3,9,10
0
0
ns
W19
WE# High to CLK Valid
3,10
20
20
ns
W20
WE# High to ADV# High
3,10
20
20
ns
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