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參數(shù)資料
| 型號： | GS8182T08GBD-167IT |
| 廠商： | GSI TECHNOLOGY |
| 元件分類： | SRAM |
| 英文描述： | 2M X 8 DDR SRAM, 0.5 ns, PBGA165 |
| 封裝： | 13 X 15 MM, ROHS COMPLIANT, FPBGA-165 |
| 文件頁數(shù)： | 11/37頁 |
| 文件大?。?/td> | 340K |
| 代理商： | GS8182T08GBD-167IT |
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Preliminary
GS8182T08/09/18/36BD-333/300/267/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00a 6/2007
19/37
2007, GSI Technology
Programmable Impedance HSTL Output Driver DC Electrical Characteristics
Parameter
Symbol
Min.
Max.
Units
Notes
Output High Voltage
VOH1
VDDQ/2
VDDQ
V
1, 3
Output Low Voltage
VOL1
Vss
VDDQ/2
V
2, 3
Output High Voltage
VOH2
VDDQ – 0.2
VDDQ
V
4, 5
Output Low Voltage
VOL2
Vss
0.2
V
4, 6
Notes:
1.
IOH = (VDDQ/2) / (RQ/5) +/– 15% @ VOH = VDDQ/2 (for: 175Ω ≤ RQ ≤ 350Ω).
2.
IOL = (VDDQ/2) / (RQ/5) +/– 15% @ VOL = VDDQ/2 (for: 175Ω ≤ RQ ≤ 350Ω).
3. Parameter tested with RQ = 250
Ω and VDDQ = 1.5 V or 1.8 V
4. 0
Ω ≤ RQ ≤ ∞Ω
5. IOH = –1.0 mA
6. IOL = 1.0 mA
Operating Currents
Parameter
Symbol
Test Conditions
-333
-300
-267
-250
-200
-167
Notes
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
0
to
70°C
–
40
to
85°C
Operating Current (x36):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
TBD
2, 3
Operating Current (x18):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
TBD
2, 3
Operating Current (x9):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
TBD
2, 3
Operating Current (x8):
DDR
IDD
VDD = Max, IOUT = 0 mA
Cycle Time
≥ tKHKH Min
TBD
2, 3
Standby Current (NOP):
DDR
ISB1
Device deselected,
IOUT = 0 mA, f = Max,
All Inputs
≤ 0.2 V or ≥ VDD – 0.2 V
TBD
2, 4
Notes:
1.
Power measured with output pins floating.
2.
Minimum cycle, IOUT = 0 mA
3.
Operating current is calculated with 50% read cycles and 50% write cycles.
4.
Standby Current is only after all pending read and write burst operations are completed.
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