參數(shù)資料
型號(hào)： GS8182T08GBD-167IT
廠商： GSI TECHNOLOGY
元件分類： SRAM
英文描述： 2M X 8 DDR SRAM, 0.5 ns, PBGA165
封裝： 13 X 15 MM, ROHS COMPLIANT, FPBGA-165
文件頁(yè)數(shù)： 8/37頁(yè)
文件大小： 340K
代理商： GS8182T08GBD-167IT
Preliminary
GS8182T08/09/18/36BD-333/300/267/250/200/167
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
Rev: 1.00a 6/2007
16/37
2007, GSI Technology
Recommended Operating Conditions
Absolute Maximum Ratings
(All voltages reference to VSS)
Symbol
Description
Value
Unit
VDD
Voltage on VDD Pins
–0.5 to 2.9
V
VDDQ
Voltage in VDDQ Pins
–0.5 to VDD
V
VREF
Voltage in VREF Pins
–0.5 to VDDQ
V
VI/O
Voltage on I/O Pins
–0.5 to VDDQ +0.5 (≤ 2.9 V max.)
V
VIN
Voltage on Other Input Pins
–0.5 to VDDQ +0.5 (≤ 2.9 V max.)
V
IIN
Input Current on Any Pin
+/–100
mA dc
IOUT
Output Current on Any I/O Pin
+/–100
mA dc
TJ
Maximum Junction Temperature
125
oC
TSTG
Storage Temperature
–55 to 125
oC
Note:
Permanent damage to the device may occur if the Absolute Maximum Ratings are exceeded. Operation should be restricted to Recommended
Operating Conditions. Exposure to conditions exceeding the Recommended Operating Conditions, for an extended period of time, may affect
reliability of this component.
Power Supplies
Parameter
Symbol
Min.
Typ.
Max.
Unit
Supply Voltage
VDD
1.7
1.8
1.9
V
I/O Supply Voltage
VDDQ
1.4
—
1.9
V
Reference Voltage
VREF
0.68
—
0.95
V
Notes:
1. Unless otherwise noted, all performance specifications quoted are evaluated for worst case at both 1.4 V
≤ VDDQ ≤ 1.6 V (i.e., 1.5 V I/O)
and 1.7 V
≤ VDDQ ≤ 1.9 V (i.e., 1.8 V I/O) and quoted at whichever condition is worst case.
2. The power supplies need to be powered up simultaneously or in the following sequence: VDD, VDDQ, VREF, followed by signal inputs. The
power down sequence must be the reverse. VDDQ must not exceed VDD..
Operating Temperature
Parameter
Symbol
Min.
Typ.
Max.
Unit
Ambient Temperature
(Commercial Range Versions)
TA
025
70
°C
Ambient Temperature
(Industrial Range Versions)
TA
–40
25
85
°C
相關(guān)PDF資料
PDF描述
GS82032AT-4I 64K X 32 CACHE SRAM, 10 ns, PQFP100
GS8342S36AE-200S 1M X 36 DDR SRAM, 0.45 ns, PBGA165
GS880Z18CT-250IVT 512K X 18 ZBT SRAM, QFP100
GSIB6A20 2.8 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
GT25C32-2UDLI-TR 4K X 8 SPI BUS SERIAL EEPROM, DSO8
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GS8182T09BD-375 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 18MBIT 2M X 9 0.45NS 165FPBGA - Trays
GS8182T09BD-400 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 18MBIT 2M X 9 0.45NS 165FPBGA - Trays
GS8182T18BD-167 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 18MBIT 1MX18 0.5NS 165FPBGA - Trays
GS8182T18BGD-250I 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 18MBIT 1MX18 0.45NS 165FPBGA - Trays
GS8182T19BD-435 制造商:GSI Technology 功能描述:SRAM SYNC SGL 1.8V 18MBIT 1MX18 0.45NS 165FPBGA - Trays
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*