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參數(shù)資料
| 型號： | HY5PS12823LF |
| 英文描述： | 64Mx8|1.8V|8K|D43/D44/D54/D55|DDR II SDRAM - 512M |
| 中文描述： | 64Mx8 | 1.8 | 8K的| D43/D44/D54/D55 |的DDR II內(nèi)存- 512M |
| 文件頁數(shù)： | 25/66頁 |
| 文件大?。?/td> | 862K |
| 代理商： | HY5PS12823LF |
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Rev. 0.52/Nov. 02 25
HY5PS12423(L)F
HY5PS12823(L)F
HY5PS121623(L)F
BURST LENGTH & TYPE
Read and write accesses to the DDR-II SDRAM are burst oriented, with the burst length being programmable. The
burst length determines the maximum number of column locations that can be accessed for a given Read or Write
command. DDR-II SDRAM supports 4bit burst and 8bit burst modes only. For 8bit burst mode, full interleave address
ordering is supported, however, sequential address ordering is nibble based for ease of implementation.
Accesses within a given burst may be programmed to be either nibble sequential or interleaved; this is referred to as
the burst type and is selected via bit A3. The ordering of accesses within a burst is determined by the burst length, the
burst type and the starting column address, as shown in Burst Definitionon Table
Seamless burst read or write operation are supported. Unlike DDR-I devices, interruption of a burst read or write oper-
ation is prohibited. Therefore the Burst Stop command is not supported on DDR-II SDRAM devices.
Burst Length and Sequence
Burst Length
Starting Address (A2,A1,A0)
Nibble Sequential
Interleave
4
X00
0, 1, 2, 3
0, 1, 2, 3
X01
1, 2, 3, 0
1, 0, 3, 2
X10
2, 3, 0, 1
2, 3, 0, 1
X11
3, 0, 1, 2
3, 2, 1, 0
8
000
0, 1, 2, 3, 4, 5, 6, 7
0, 1, 2, 3, 4, 5, 6, 7
001
1, 2, 3, 0, 5, 6, 7, 4
1, 0, 3, 2, 5, 4, 7, 6
010
2, 3, 0, 1, 6, 7, 4, 5
2, 3, 0, 1, 6, 7, 4, 5
011
3, 0, 1, 2, 7, 4, 5, 6
3, 2, 1, 0, 7, 6, 5, 4
100
4, 5, 6, 7, 0, 1, 2, 3
4, 5, 6, 7, 0, 1, 2, 3
101
5, 6, 7, 4, 1, 2, 3, 0
5, 4, 7, 6, 1, 0, 3, 2
110
6, 7, 4, 5, 2, 3, 0, 1
6, 7, 4, 5, 2, 3, 0, 1
111
7, 4, 5, 6, 3, 0, 1, 2
7, 6, 5, 4, 3, 2, 1, 0
相關(guān)PDF資料 |
PDF描述 |
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| HY5P | Current Transducers HY 5 to 25-P/SP1 |
| HY5R256HC | -|2.5V|8K|40|Direct RDRAM - 256M |
| HY5R288HC | -|2.5V|8K|40|Direct RDRAM - 288M |
| HY5V16CF | 1Mx16|3.3V|4K|H|SDR SDRAM - 16M |
| HY5V16CF-H | x16 SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
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| HY5PS1G1631AFP | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM |
| HY5PS1G1631AFP-Y5 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM |
| HY5PS1G1631ALFP | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM |
| HY5PS1G1631ALFP-Y5 | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM |
| HY5PS1G1631CFP | 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:1Gb DDR2 SDRAM |
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